Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi DTC115TM3T5G
| Produttore | |
| Cod. Prod. | DTC115TM3T5G |
| Cod. LCSC | C896202 |
| Imballo | SOT-723 |
| Numero Cliente | |
| Attr. chiave | 50V 160 100mA 260mW NPN 1 NPN (Pre-Biased) SOT-723 Single, Pre-Biased Bipolar Transistors RoHS |
| Scheda Tecnica | onsemi DTC115TM3T5G |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-723 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 100kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 260mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-723 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 100kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 260mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Caratteristiche
Traduzione AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.0491 | $ 0.05 |
| 200+ | $ 0.019 | $ 3.80 |
| 500+ | $ 0.0184 | $ 9.20 |
| 1,000+ | $ 0.018 | $ 18.00 |
Package Standard8000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-723 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 100kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 260mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-723 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 100kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 260mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Caratteristiche
Traduzione AI
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| DTC114YM3T5G | onsemi | SOT-723 | 10 | $ 0.077 | ||
| NSVDTC114YM3T5G | onsemi | SOT-723 | 100 | $ 0.2803 | ||
| RN1104MFV,L3F | TOSHIBA | SOT-723 | 370 | $ 0.1678 | ||
| DTC143ZM | JSCJ | SOT-723 | 12,400 | $ 0.0313 | ||
| DTC143ZMT2L | ROHM | SOT-723 | 5,460 | $ 0.0412 | ||
| DTC114TM3T5G | onsemi | SOT-723 | 0 | $ 0.7409 | ||
| DTC143TM3T5G | onsemi | SOT-723-3 | 0 | $ 0.0366 | ||
| DTC143ZM3T5G | onsemi | SOT-723-3 | 0 | $ 0.0914 | ||
| NSVDTC143ZM3T5G | onsemi | SOT-723 | 0 | $ 0.0434 | ||
| DTC023YMT2L | ROHM | SOT-723 | 0 | $ 0.0684 |