Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NVMTS0D4N04CTXG
| Hersteller | |
| Herst.-Teilenr. | NVMTS0D4N04CTXG |
| LCSC-Nr. | C894183 |
| Verp. | DFNW-8(8.4x8.3) |
| Kundennummer | |
| Hauptmerkm. | 244W 40V 558A 4V 0.45mΩ@10V 1 N-channel N-Channel DFNW-8(8.4x8.3) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NVMTS0D4N04CTXG |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 6 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 8.31nF | |
| Pd - Power Dissipation | 244W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 558A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.5nF | |
| Gate Charge(Qg) | 251nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 8.31nF | |
| Pd - Power Dissipation | 244W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 558A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.5nF | |
| Gate Charge(Qg) | 251nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) for reduced conduction losses
- Low gate charge QG and capacitance for reduced driving losses
- Industry-standard Power 88 package
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, halogen-free/BFR-free, RoHS compliant
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 25.6382 | $ 25.64 |
| 10+ | $ 24.8779 | $ 248.78 |
| 30+ | $ 23.5603 | $ 706.81 |
| 100+ | $ 22.4117 | $ 2241.17 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 8.31nF | |
| Pd - Power Dissipation | 244W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 558A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.5nF | |
| Gate Charge(Qg) | 251nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.4x8.3) | |
| Output Capacitance(Coss) | 8.31nF | |
| Pd - Power Dissipation | 244W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 558A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF | |
| RDS(on) | 0.45mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16.5nF | |
| Gate Charge(Qg) | 251nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) for reduced conduction losses
- Low gate charge QG and capacitance for reduced driving losses
- Industry-standard Power 88 package
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, halogen-free/BFR-free, RoHS compliant
C894183 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NTMTS0D4N04CTXG | onsemi | DFNW-8(8.4x8.3) | 16 | $ 14.0774 | ||
| NVMTS0D4N04CLTXG | onsemi | PowerTDFN-8(7.9x8) | 32 | $ 7.6943 | ||
| NTMTS0D6N04CTXG | onsemi | DFNW-8(8.4x8.3) | 10 | $ 11.093 | ||
| NVMTS0D6N04CTXG | onsemi | DFNW-8(8.4x8.3) | 10 | $ 20.9073 | ||
| NTMTS0D6N04CLTXG | onsemi | DFNW-8(8.4x8.3) | 0 | $ 10.3792 | ||
| NTMTS0D4N04CLTXG | onsemi | DFNW-8(8.3x8.4) | 0 | $ 6.3227 |