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EDA-ModelleEasyEDA
onsemi FDMC8030
| Hersteller | |
| Herst.-Teilenr. | FDMC8030 |
| LCSC-Nr. | C890952 |
| Verp. | Power(3x3) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH ARR 40V 12A Power(3x3) |
| Datenblatt | onsemi FDMC8030 |
| RoHS-Konformität | 3 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power(3x3) | |
| Output Capacitance(Coss) | 321pF | |
| Pd - Power Dissipation | 1.9W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 28mΩ@3.2V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.975nF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power(3x3) | |
| Output Capacitance(Coss) | 321pF | |
| Pd - Power Dissipation | 1.9W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 28mΩ@3.2V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.975nF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±12V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm × 3 mm MLI P) package. The package is enhanced for exceptional thermal performance.
Merkmale
KI-Übersetzung
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
- Termination is Lead-free and RoHS Compliant
Anwendungen
KI-Übersetzung
- Battery Protection
- Load Switching
- Point of Load
Vorrätig: 332
332 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.7172 | $ 1.72 |
| 10+ | $ 1.4626 | $ 14.63 |
| 30+ | $ 1.3042 | $ 39.13 |
| 100+ | $ 1.1116 | $ 111.16 |
| 500+ | $ 1.0382 | $ 519.10 |
| 1,000+ | $ 1.0072 | $ 1007.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power(3x3) | |
| Output Capacitance(Coss) | 321pF | |
| Pd - Power Dissipation | 1.9W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 28mΩ@3.2V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.975nF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | Power(3x3) | |
| Output Capacitance(Coss) | 321pF | |
| Pd - Power Dissipation | 1.9W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 28mΩ@3.2V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.975nF | |
| Gate Charge(Qg) | 21nC | |
| Vgs | ±12V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm × 3 mm MLI P) package. The package is enhanced for exceptional thermal performance.
Merkmale
KI-Übersetzung
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
- Termination is Lead-free and RoHS Compliant
Anwendungen
KI-Übersetzung
- Battery Protection
- Load Switching
- Point of Load
C890952 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |