- Pinbelegung
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Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FDN340P
| Hersteller | |
| Herst.-Teilenr. | FDN340P |
| LCSC-Nr. | C75469 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 20V SOT-23 |
| Datenblatt | onsemi FDN340P |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially taliored to minimize the on-state resistance and yet maintain low gate charge for superior swtiching performance.
Merkmale
KI-Übersetzung
- –2A, 20 V; RDS(ON)=70 mΩ @ VGS=-4.5 V; RDS(ON)=110 mΩ @ VGS=-2.5 V
- Low gate charge (7.2 nC typical)
- Highperformance trench technology for extremely low RDS(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capablitiy
Anwendungen
KI-Übersetzung
- portable electronics applications
- load swtiching and power management
- battery charging circutis
- DC/DC conversion
Vorrätig: 5,830
5,830 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2293 | $ 1.15 |
| 50+ | $ 0.1827 | $ 9.14 |
| 150+ | $ 0.1628 | $ 24.42 |
| 500+ | $ 0.1379 | $ 68.95 |
| 3,000+ | $ 0.1102 | $ 330.60 |
| 6,000+ | $ 0.1036 | $ 621.60 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially taliored to minimize the on-state resistance and yet maintain low gate charge for superior swtiching performance.
Merkmale
KI-Übersetzung
- –2A, 20 V; RDS(ON)=70 mΩ @ VGS=-4.5 V; RDS(ON)=110 mΩ @ VGS=-2.5 V
- Low gate charge (7.2 nC typical)
- Highperformance trench technology for extremely low RDS(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capablitiy
Anwendungen
KI-Übersetzung
- portable electronics applications
- load swtiching and power management
- battery charging circutis
- DC/DC conversion
C75469 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FDN340P | onsemi | SOT-23 | 90 | $ 0.3306 | ||
| SP2301T2 | Siliup | SOT-23 | 3,920 | $ 0.0304 | ||
| FDN302P | onsemi | SOT-23-3 | 1,445 | $ 0.3474 | ||
| PMV65XP,215 | Nexperia | SOT-23 | 535 | $ 0.0834 | ||
| FDN302P | Slkor | SOT-23 | 150 | $0.0203 $0.0406 | ||
| SI2305 | YONGYUTAI | SOT-23 | 3,140 | $ 0.0388 | ||
| PMV250EPEAR-JSM | JSMSEMI | SOT-23 | 4,530 | $ 0.059 | ||
| JSM5P04G | JSMSEMI | SOT-23 | 2,260 | $0.0310 $0.0413 | ||
| PMV65XPVL | Nexperia | SOT-23 | 0 | $ 0.58 | ||
| FDN342P | onsemi | SOT-23 | 0 | $ 0.1947 |