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VBsemi Elec IRF7493TRPBF-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | IRF7493TRPBF-VB |
| Nr LCSC | C7429017 |
| Opak. | SO-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 80V 13A SO-8 |
| Karta Katalogowa | VBsemi Elec IRF7493TRPBF-VB |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Super Trench technology Power MOSFET
- Excellent gate charge x Rds (on) product(FOM)
- Very low on-resfistance Rds (on)
- 100 % Rg and UIS Tested
Zastosowania
Tłumaczenie AI
- DC/DC Converter
- Ideal for hfigh-frequency swfitchfing and synchronous
Na stanie: 33
33 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.778$ 0.6613 | $ 0.66 |
| 10+ | $ 0.6272$ 0.5332 | $ 5.33 |
| 30+ | $ 0.551$ 0.4684 | $ 14.05 |
| 100+ | $ 0.4764$ 0.4050 | $ 40.50 |
| 500+ | $ 0.4303$ 0.3658 | $ 182.90 |
| 1,000+ | $ 0.4081$ 0.3469 | $ 346.90 |
Standardowa Obudowa4000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 382pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 6.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.531nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Super Trench technology Power MOSFET
- Excellent gate charge x Rds (on) product(FOM)
- Very low on-resfistance Rds (on)
- 100 % Rg and UIS Tested
Zastosowania
Tłumaczenie AI
- DC/DC Converter
- Ideal for hfigh-frequency swfitchfing and synchronous
C7429017 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IRF7854TRPBF-VB | VBsemi Elec | SO-8 | 8 | $0.6884 $0.8098 | ||
| SI4090DY-T1-GE3-VB | VBsemi Elec | SO-8 | 20 | $0.7052 $0.8296 | ||
| SI4190ADY-T1-GE3-VB | VBsemi Elec | SO-8 | 1 | $0.7545 $0.8876 | ||
| VBA1101N | VBsemi Elec | SO-8 | 50 | $0.7356 $0.8653 | ||
| FDS86140-VB | VBsemi Elec | SOP-8 | 18 | $0.9447 $1.1114 | ||
| VBA1810S | VBsemi Elec | SO-8 | 0 | $ 1.0443 | ||
| VBA1805S | VBsemi Elec | SO-8 | 0 | $ 1.0443 | ||
| TPC8051-H-VB | VBsemi Elec | SO-8 | 0 | $0.9905 $1.0426 | ||
| NCEP8814AS-VB | VBsemi Elec | SO-8 | 0 | $ 1.0761 | ||
| VBA1108S | VBsemi Elec | SO-8 | 0 | $ 1.1152 |