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TOSHIBA TK60S10N1L,LXHQ
| Producent | |
| Nr części prod. | TK60S10N1L,LXHQ |
| Nr LCSC | C6880972 |
| Opak. | DPAK |
| Numer Klienta | |
| Klucz. cechy | 100V 60A 3.5V 180W 6.11mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS |
| Karta Katalogowa | TOSHIBA TK60S10N1L,LXHQ |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DPAK | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 180W | |
| RDS(on) | 6.11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.32nF | |
| Gate Charge(Qg) | 60nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DPAK | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| RDS(on) | 6.11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.32nF | |
| Gate Charge(Qg) | 60nC@10V |
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Funkcje
Tłumaczenie AI
- AEC-Q101 qualified
- Low drain-source on-resistance: RDS(ON) = 5.14 \ mΩ (typ.)
- Low leakage current: IDSS = 10 \ \mu A (max.) (VDS = 100 \ V)
- Enhancement mode: Vth = 2.5 to 3.5 \ V (VDS = 10 \ V, ID = 0.5 \ mA)
Zastosowania
Tłumaczenie AI
- Automotive motor drivers
- Switching regulators
- DC-DC converters
Na stanie: 22
22 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 3.8578 | $ 3.86 |
| 10+ | $ 3.7922 | $ 37.92 |
| 30+ | $ 3.7496 | $ 112.49 |
| 100+ | $ 3.707 | $ 370.70 |
Standardowa Obudowa2000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DPAK | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 180W | |
| RDS(on) | 6.11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.32nF | |
| Gate Charge(Qg) | 60nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DPAK | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| RDS(on) | 6.11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.32nF | |
| Gate Charge(Qg) | 60nC@10V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- AEC-Q101 qualified
- Low drain-source on-resistance: RDS(ON) = 5.14 \ mΩ (typ.)
- Low leakage current: IDSS = 10 \ \mu A (max.) (VDS = 100 \ V)
- Enhancement mode: Vth = 2.5 to 3.5 \ V (VDS = 10 \ V, ID = 0.5 \ mA)
Zastosowania
Tłumaczenie AI
- Automotive motor drivers
- Switching regulators
- DC-DC converters
C6880972 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| AUD069N10A | ANHI | TO-252 | 7 | $ 0.51 | ||
| IPD068N10N3G | Infineon | TO-252-3 | 1,528 | $ 1.9846 | ||
| NSH045N100S | NH | TO-252 | 2,343 | $ 0.6654 | ||
| AUIRLR3110ZTRPBF-VB | VBsemi Elec | TO-252 | 14 | $ 0.9939 | ||
| IPD90N10S4-06 | Infineon | TO-252-3 | 3 | $ 2.229 | ||
| HYG053N10NS1D | HUAYI | TO-252-2L | 930 | $0.5089 $0.5654 | ||
| IRLR3110ZPBF-VB | VBsemi Elec | TO-252 | 190 | $1.1008 $1.1587 | ||
| QN10L16-VB | VBsemi Elec | TO-252 | 102 | $ 0.9637 | ||
| STD100N10F7-VB | VBsemi Elec | TO-252 | 4 | $ 0.9336 | ||
| IRFR4510TR-VB | VBsemi Elec | TO-252 | 3 | $1.0549 $1.1104 |