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TOSHIBA TCR3DG45,LF

Hersteller
TOSHIBA
Herst.-Teilenr.
TCR3DG45,LF
LCSC-Nr.
C6880293
Verp.
WCSPE-4(0.7x0.7)
Kundennummer
Hauptmerkm.
4.5V Positive Fixed WCSPE-4(0.7x0.7) Voltage Regulators - Linear, Low Drop Out (LDO) Regulators RoHS
DatenblattTOSHIBA TCR3DG45,LF
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Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 0.2582$ 0.26
200+$ 0.103$ 20.60
500+$ 0.0996$ 49.80
1,000+$ 0.0979$ 97.90
Standardgehäuse5000/Full Reel
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Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Power Management (PMIC)/Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
HerstellerTOSHIBA
Verp.WCSPE-4(0.7x0.7)
Output Voltage4.5V
Number of Outputs1
Operating Temperature-40℃~+85℃
Supply Current (Iq)-
Output ConfigurationPositive
Operating Voltage5.5V
Output Current300mA
Output TypeFixed
FeaturesEnable control;Over Current Protection;Thermal shutdown;Output discharge
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Beschreibung

KI-Übersetzung

The TCR3DG series are CMOS general purpose single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature overcurrent protection, thermal shutdown, Inrush current reduction and Auto-discharge. The TCR3DG series are offered in the ultra small package WCSP4E (0.645 mm×0.645 mm; t 0.40 mm). It has a low dropout voltage of 160 mV (3.2 V output, lOUT = 300 mA) with low output noise voltage of 38 μVrms (2.5 V output) and a load transient response of only ∠VoUT = ±80 mV (IOUT = 1 mA ⇔ 300 mA, COUT = 1.0 μF). Weight : 0.34 mg (Typ.) As small ceramic input and output capacitors can be used with the TCR3DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones.

Merkmale

KI-Übersetzung
  • Low Dropout voltage VDO = 160 mV (Typ.) at 3.2 V output, lOUT = 300 mA
  • Low output noise voltage VNO = 38 μVrms (Typ.) at 2.5 V output, lOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz
  • Fast load transient response (ΔV0UT = ±80 mV (Typ.) at lOUT = 1 ⇔ 300 mA, COUT = 1.0 μF)
  • High ripple rejection ratio (70 dB (Typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)
  • Overcurrent protection
  • Thermal shutdown
  • Inrush current reduction
  • Auto-discharge
  • Pull down connection between CONTROL and GND
  • Ceramic capacitors can be used (CIN = 1.0 μF, COUT = 1.0 μF)
  • Ultra small package WCSP4E (0.645 mm×0.645 mm; t 0.40 mm)

Anwendungen

KI-Übersetzung
  • Power IC developed for portable applications
  • IoT equipment
  • Wearable devices