DIODES FZT857QTA

Hersteller	DIODES
Herst.-Teilenr.	FZT857QTA
LCSC-Nr.	C6563689
Verp.	SOT-223-3
Kundennummer
Hauptmerkm.	300V 100 3.5A NPN SOT-223-3 Single Bipolar Transistors RoHS
Datenblatt	DIODES FZT857QTA

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	DIODES
Verp.	SOT-223-3
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	50nA
Transition frequency(fT)	80MHz
Collector - Emitter Voltage VCEO	300V
DC Current Gain	100
Pd - Power Dissipation	1.6W
Current - Collector(Ic)	3.5A
type	NPN
Vce Saturation(VCE(sat))	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	DIODES
Verp.	SOT-223-3
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	50nA
Transition frequency(fT)	80MHz

KI-Übersetzung

BVCEO > 300 V
IC Max. 3.5A High Continuous Collector Current
ICM Max. 5A Peak Pulse Current
Very Low Saturation Voltage VCE(sat) < 155 mV @ 1A
RCE(sat) = 87 mΩ for a Low Equivalent On-Resistance
hFE Specified Up to 3A for a High Gain Hold-Up
Complementary PNP Type: FZT957Q
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. "Green" Device
The FZT857Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

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Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	DIODES
Verp.	SOT-223-3
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	50nA
Transition frequency(fT)	80MHz
Collector - Emitter Voltage VCEO	300V
DC Current Gain	100
Pd - Power Dissipation	1.6W
Current - Collector(Ic)	3.5A
type	NPN
Vce Saturation(VCE(sat))	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	DIODES
Verp.	SOT-223-3
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	50nA
Transition frequency(fT)	80MHz

KI-Übersetzung

BVCEO > 300 V
IC Max. 3.5A High Continuous Collector Current
ICM Max. 5A Peak Pulse Current
Very Low Saturation Voltage VCE(sat) < 155 mV @ 1A
RCE(sat) = 87 mΩ for a Low Equivalent On-Resistance
hFE Specified Up to 3A for a High Gain Hold-Up
Complementary PNP Type: FZT957Q
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. "Green" Device
The FZT857Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.