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AOS AOT2910L
| Hersteller | |
| Herst.-Teilenr. | AOT2910L |
| LCSC-Nr. | C6500749 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 100V 2.7V 24mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datenblatt | AOS AOT2910L |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 6A;30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.19nF | |
| Gate Charge(Qg) | 25nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 6A;30A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.19nF | |
| Gate Charge(Qg) | 25nC@10V |
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8016 | $ 0.80 |
| 200+ | $ 0.3207 | $ 64.14 |
| 500+ | $ 0.3096 | $ 154.80 |
| 1,000+ | $ 0.3048 | $ 304.80 |
Standardgehäuse1000/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 6A;30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.19nF | |
| Gate Charge(Qg) | 25nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 6A;30A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | - | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.19nF | |
| Gate Charge(Qg) | 25nC@10V |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| HSP0026 | HUASHUO | TO-220 | 85 | $ 0.49 | ||
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| HST50N10 | HUAKE | TO-220C | 40 | $ 0.3175 | ||
| IRF1310NPBF-JSM | JSMSEMI | TO-220-3 | 200 | $ 0.3357 | ||
| FDP3672-JSM | JSMSEMI | TO-220-3 | 200 | $ 0.7691 | ||
| AOT254L | AOS | TO-220 | 0 | $ 1.057 | ||
| AOT2500L | AOS | TO-220 | 0 | $ 2.9234 | ||
| NCEP0135A | NCE | TO-220 | 0 | $ 0.5579 | ||
| AOT296L | AOS | TO-220 | 0 | $ 1.165 | ||
| AOT292L | AOS | TO-220 | 0 | $ 2.3063 |