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Infineon/CYPRESS S29GL128N11TFVR10

Hersteller
Herst.-Teilenr.
S29GL128N11TFVR10
LCSC-Nr.
C6472099
Verp.
TFSOP-56-18.4mm
Kundennummer
Hauptmerkm.
128Mbit 2.7V~3.6V Parallel TFSOP-56-18.4mm Memory
DatenblattInfineon/CYPRESS S29GL128N11TFVR10
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Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 7.6288$ 7.63
200+$ 3.0451$ 609.02
500+$ 2.9432$ 1471.60
1,000+$ 2.8923$ 2892.30
Standardgehäuse1/Full Bag
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Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Memory/Memory
HerstellerInfineon/CYPRESS
Verp.TFSOP-56-18.4mm
Operating Temperature-40℃~+85℃
FeaturesHardware write protection;Power-on reset
Memory Size128Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)110ns
Page Programming Time (Tpp)-
Standby Supply Current1uA
InterfaceParallel

Beschreibung

KI-Übersetzung

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Merkmale

KI-Übersetzung
  • Single 3V read/program/erase (2.7-3.6 V)
  • Enhanced VersatileI/O™ control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on V₁₀ input. V₁₀ range is 1.65 to VCC
  • 90 nm MirrorBit process technology
  • 8-word/16-byte page read buffer
  • 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
  • Secured Silicon Sector region – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number – C