ROHM BR93H66RF-WCE2

Producent	ROHM
Nr części prod.	BR93H66RF-WCE2
Nr LCSC	C6132367
Opak.	SOIC-8-175mil
Numer Klienta
Klucz. cechy	4Kbit 2.7V~5.5V 1.25MHz SOIC-8-175mil Memory RoHS
Karta Katalogowa	ROHM BR93H66RF-WCE2
Zgodność z RoHS	2 dokumentów dostępnych

Specyfikacje Produktu

Wszystko

Typ	Opis
Kategoria	Integrated Circuits (ICs)/Memory/Memory
Producent	ROHM
Opak.	SOIC-8-175mil
Operating Temperature	-40℃~+125℃
Features	Hardware write protection function;Built-in power-on reset (POR);Noise suppression function
Memory Size	4Kbit
Voltage - Supply	2.7V~5.5V
Clock Frequency	1.25MHz
Access Time	-
Data Retention - TDR (Year)	40 Years
Current - Supply	4.5mA
Write Cycle Time(tWC)	7ms
Standby Supply Current	10uA
Write Cycle Endurance	1,000,000 cycles
Interface	-

Typ	Opis
Kategoria	Integrated Circuits (ICs)/Memory/Memory
Producent	ROHM
Opak.	SOIC-8-175mil
Operating Temperature	-40℃~+125℃
Features	Hardware write protection function;Built-in power-on reset (POR);Noise suppression function
Memory Size	4Kbit
Voltage - Supply	2.7V~5.5V
Clock Frequency	1.25MHz

Tłumaczenie AI

BR93Hxx - WC is a serial EEPROM featuring a 3-wire serial interface.

Tłumaczenie AI

Microwire bus compatible
8kV ESD protection (HBM, typical, except BR93H66RFVM-WC)
Wide temperature range: -40°C to +125°C
Common package family and pin configuration
2.7V to 5.5V single supply operation
Auto-increment address during read operations
Write error prevention: write inhibit on power-up; write inhibit via command code; write error prevention circuit at low voltage
Auto-erase and auto-clear programming cycle
Programming status indication via READY/BUSY
Low current consumption: write (at 5V): 0.6mA (typ.); read (at 5V): 0.6mA (typ.); standby (at 5V): 0.1μA (typ.) (CMOS input)
Built-in noise filter for CS, SK, and DI pins
High reliability dual-cell architecture, ROHM proprietary design
20-year data retention (Ta ≤ 125°C)
300,000-cycle endurance (Ta ≤ 125°C)
All addresses initialized to FFFFh at factory
AEC-Q100 qualified

Brak w magazynie

Powiadom mnie

Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece

Dodaj do Listy BOM

Szt.	Cena jedn.(Tylko do wglądu)	Suma całkowita
1+	$ 0.7194	$ 0.72
200+	$ 0.2872	$ 57.44
500+	$ 0.2779	$ 138.95
1,000+	$ 0.2733	$ 273.30
Standardowa Obudowa2500/Full Reel

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Wszystko

Typ	Opis
Kategoria	Integrated Circuits (ICs)/Memory/Memory
Producent	ROHM
Opak.	SOIC-8-175mil
Operating Temperature	-40℃~+125℃
Features	Hardware write protection function;Built-in power-on reset (POR);Noise suppression function
Memory Size	4Kbit
Voltage - Supply	2.7V~5.5V
Clock Frequency	1.25MHz
Access Time	-
Data Retention - TDR (Year)	40 Years
Current - Supply	4.5mA
Write Cycle Time(tWC)	7ms
Standby Supply Current	10uA
Write Cycle Endurance	1,000,000 cycles
Interface	-

Typ	Opis
Kategoria	Integrated Circuits (ICs)/Memory/Memory
Producent	ROHM
Opak.	SOIC-8-175mil
Operating Temperature	-40℃~+125℃
Features	Hardware write protection function;Built-in power-on reset (POR);Noise suppression function
Memory Size	4Kbit
Voltage - Supply	2.7V~5.5V
Clock Frequency	1.25MHz

Tłumaczenie AI

BR93Hxx - WC is a serial EEPROM featuring a 3-wire serial interface.

Tłumaczenie AI

Microwire bus compatible
8kV ESD protection (HBM, typical, except BR93H66RFVM-WC)
Wide temperature range: -40°C to +125°C
Common package family and pin configuration
2.7V to 5.5V single supply operation
Auto-increment address during read operations
Write error prevention: write inhibit on power-up; write inhibit via command code; write error prevention circuit at low voltage
Auto-erase and auto-clear programming cycle
Programming status indication via READY/BUSY
Low current consumption: write (at 5V): 0.6mA (typ.); read (at 5V): 0.6mA (typ.); standby (at 5V): 0.1μA (typ.) (CMOS input)
Built-in noise filter for CS, SK, and DI pins
High reliability dual-cell architecture, ROHM proprietary design
20-year data retention (Ta ≤ 125°C)
300,000-cycle endurance (Ta ≤ 125°C)
All addresses initialized to FFFFh at factory
AEC-Q100 qualified