Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia PDTC114YTVL
| Producent | |
| Nr części prod. | PDTC114YTVL |
| Nr LCSC | C552162 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | 50V 100 100mA 250mW NPN 1 NPN (Pre-Biased) SOT-23 Single, Pre-Biased Bipolar Transistors RoHS |
| Karta Katalogowa | Nexperia PDTC114YTVL |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 4.7 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 4.7 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.
Funkcje
Tłumaczenie AI
- Output current capability up to 100 mA
- Integrated bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
automotive applications
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.043 | $ 0.04 |
| 200+ | $ 0.0167 | $ 3.34 |
| 500+ | $ 0.0161 | $ 8.05 |
| 1,000+ | $ 0.0158 | $ 15.80 |
Standardowa Obudowa10000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 4.7 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 4.7 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.
Funkcje
Tłumaczenie AI
- Output current capability up to 100 mA
- Integrated bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
automotive applications
C552162 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| PDTC143ZT,215 | Nexperia | SOT-23 | 17,620 | $ 0.0656 | ||
| NHDTC114YTR | Nexperia | TO-236AB | 10 | $ 0.0455 | ||
| MMUN2214LT1G | onsemi | SOT-23 | 20,120 | $ 0.0357 | ||
| PDTD123YT,215 | Nexperia | SOT-23 | 170,040 | $ 0.0386 | ||
| PDTC143ZT,235 | Nexperia | SOT-23 | 0 | $ 0.0252 | ||
| SMMUN2214LT1G | onsemi | SOT-23 | 0 | $ 0.1077 | ||
| NHDTC114YTVL | Nexperia | TO-236AB | 0 | $ 0.0576 | ||
| MUN2214T3G | onsemi | SC-59 | 0 | $ 0.027 | ||
| PDTC143XTVL | Nexperia | SOT-23 | 0 | $ 0.1729 | ||
| NHDTC123JTR | Nexperia | TO-236AB | 0 | $ 0.0298 |