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Modelli EDAEasyEDA
Nexperia PDTB114ETR
| Produttore | |
| Cod. Prod. | PDTB114ETR |
| Cod. LCSC | C552128 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | TRANS PREBIAS 50V SOT-23 |
| Scheda Tecnica | Nexperia PDTB114ETR |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 140MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 70 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 500mA | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 460mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Operating temperature | -55℃~+175℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 140MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 70 | |
| Vce Saturation(VCE(sat)) | 100mV |
| Tipo | Descrizione | |
|---|---|---|
| Current - Collector(Ic) | 500mA | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 460mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Operating temperature | -55℃~+175℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Caratteristiche
Traduzione AI
- 500 mA output current capability
- ± 10 % resistor ratio tolerance
- Built-in bias resistors
- AEC-Q101 qualified
- Simplifies circuit design
- High temperature applications
- Reduces component count up to 175 ℃
Applicazioni
Traduzione AI
- Switching loads
Disponibile: 1,490
1,490 Pronta consegna
Minimo: 10Multiplo: 10Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 10+ | $ 0.057 | $ 0.57 |
| 100+ | $ 0.0464 | $ 4.64 |
| 300+ | $ 0.0411 | $ 12.33 |
| 3,000+ | $ 0.0372 | $ 111.60 |
| 6,000+ | $ 0.034 | $ 204.00 |
| 9,000+ | $ 0.0324 | $ 291.60 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 140MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 70 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | 500mA | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 460mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Operating temperature | -55℃~+175℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | Nexperia | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 140MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 70 | |
| Vce Saturation(VCE(sat)) | 100mV |
| Tipo | Descrizione | |
|---|---|---|
| Current - Collector(Ic) | 500mA | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 460mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Operating temperature | -55℃~+175℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Caratteristiche
Traduzione AI
- 500 mA output current capability
- ± 10 % resistor ratio tolerance
- Built-in bias resistors
- AEC-Q101 qualified
- Simplifies circuit design
- High temperature applications
- Reduces component count up to 175 ℃
Applicazioni
Traduzione AI
- Switching loads
C552128 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| DTB114EKT146 | ROHM | TO-236-3(SOT-23-3) | 3,190 | $ 0.0924 | ||
| DTB114ECHZGT116 | ROHM | TO-236-3(SOT-23-3) | 10 | $ 0.3282 | ||
| DTB143EKT146 | ROHM | TO-236-3(SOT-23-3) | 25 | $ 0.0749 | ||
| DTB113EKT146 | ROHM | TO-236-3(SOT-23-3) | 2,995 | $ 0.1365 | ||
| LDTB113ZLT1G | LRC | SOT-23 | 5,990 | $ 0.0526 | ||
| S-LDTB113ZLT1G | LRC | SOT-23 | 610 | $ 0.0462 | ||
| DTB143ECHZGT116 | ROHM | SOT-23 | 0 | $ 0.4674 | ||
| DTB123EKT146 | ROHM | SOT-23 | 0 | $ 0.1979 | ||
| DTB123ECT116 | ROHM | TO-236-3(SOT-23-3) | 0 | $ 0.06 | ||
| DTB123ECHZGT116 | ROHM | TO-236-3(SOT-23-3) | 0 | $ 0.0299 |