Nexperia BUK664R6-40C,118
| Produttore | |
| Cod. Prod. | BUK664R6-40C,118 |
| Cod. LCSC | C549787 |
| Imballo | D2PAK |
| Numero Cliente | |
| Attr. chiave | 158W 40V 100A 2.3V 3.6mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Nexperia BUK664R6-40C,118 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 512pF | |
| Pd - Power Dissipation | 158W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 512pF | |
| Pd - Power Dissipation | 158W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±16V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
Medium level gate drive N-channel enhancement mode FET using advanced TrenchMOS technology in a plastic package. This product has been designed and qualified to the applicable AEC Q101 standard for high-performance automotive applications.
Caratteristiche
Traduzione AI
- AEC Q101 compliant
- Rated temperature up to 175°C, suitable for high thermal dissipation environments
- Compatible with standard and logic-level gate drive sources
Applicazioni
Traduzione AI
- 12 V automotive systems
- Start-stop mild hybrid applications
- Electric and electro-hydraulic power steering systems
- Transmission control
- Motor, lamp, and solenoid control
- Ultra-high performance power switches
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.2525 | $ 0.25 |
| 10+ | $ 0.2036 | $ 2.04 |
| 30+ | $ 0.1826 | $ 5.48 |
| 100+ | $ 0.1564 | $ 15.64 |
| 500+ | $ 0.1448 | $ 72.40 |
| 800+ | $ 0.1378 | $ 110.24 |
Package Standard800/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 512pF | |
| Pd - Power Dissipation | 158W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 512pF | |
| Pd - Power Dissipation | 158W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 3.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 88nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Medium level gate drive N-channel enhancement mode FET using advanced TrenchMOS technology in a plastic package. This product has been designed and qualified to the applicable AEC Q101 standard for high-performance automotive applications.
Caratteristiche
Traduzione AI
- AEC Q101 compliant
- Rated temperature up to 175°C, suitable for high thermal dissipation environments
- Compatible with standard and logic-level gate drive sources
Applicazioni
Traduzione AI
- 12 V automotive systems
- Start-stop mild hybrid applications
- Electric and electro-hydraulic power steering systems
- Transmission control
- Motor, lamp, and solenoid control
- Ultra-high performance power switches
C549787 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
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|---|---|---|---|---|---|---|
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