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EDA-ModelleEasyEDA
Infineon ISP25DP06NM
| Hersteller | |
| Herst.-Teilenr. | ISP25DP06NM |
| LCSC-Nr. | C538451 |
| Verp. | SOT-223 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 1.9A SOT-223 |
| Datenblatt | Infineon ISP25DP06NM |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 62pF | |
| Pd - Power Dissipation | 4.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.9A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 10.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 62pF | |
| Pd - Power Dissipation | 4.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.9A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 10.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- P-Channel
- Very low on-resistance RDS(on)
- 100% avalanche tested
- Normal Level
- Enhancement mode
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Vorrätig: 738
738 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5858$ 0.3340 | $ 0.33 |
| 10+ | $ 0.5241$ 0.2988 | $ 2.99 |
| 30+ | $ 0.494$ 0.2816 | $ 8.45 |
| 100+ | $ 0.4639$ 0.2645 | $ 26.45 |
| 500+ | $ 0.4449$ 0.2536 | $ 126.80 |
| 1,000+ | $ 0.4354$ 0.2482 | $ 248.20 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 62pF | |
| Pd - Power Dissipation | 4.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.9A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 10.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 62pF | |
| Pd - Power Dissipation | 4.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.9A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 10.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- P-Channel
- Very low on-resistance RDS(on)
- 100% avalanche tested
- Normal Level
- Enhancement mode
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
C538451 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| ISP26DP06NMS | Infineon | SOT-223 | 2,140 | $0.2026 $0.4133 | ||
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| BSP225,115-VB | VBsemi Elec | SOT-223 | 5 | $1.0080 $1.061 | ||
| TPZVP2106GTA | TECH PUBLIC | SOT-223 | 460 | $ 0.1365 | ||
| BSP321P-VB | VBsemi Elec | SOT-223 | 5 | $0.5937 $0.6249 | ||
| LWS60110A23 | Lewa Micro | SOT-223 | 15 | $ 0.0993 | ||
| BSP170PH6327 | Infineon | SOT-223 | 1,965 | $ 0.7392 | ||
| BSP171PH6327 | Infineon | SOT-223 | 186 | $0.6115 $1.3897 | ||
| LWS6080A23 | Lewa Micro | SOT-223 | 0 | $ 0.0119 | ||
| LWS1H150A23 | Lewa Micro | SOT-223 | 0 | $ 0.1939 |