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Modelli EDAEasyEDA
Infineon AUIRLS3034
| Produttore | |
| Cod. Prod. | AUIRLS3034 |
| Cod. LCSC | C533485 |
| Imballo | D2PAK |
| Numero Cliente | |
| Attr. chiave | 375W 40V 343A 1V 1.4mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon AUIRLS3034 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 6 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 1.98nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 343A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 935pF | |
| RDS(on) | 1.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.315nF | |
| Gate Charge(Qg) | 162nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 1.98nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 343A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 935pF | |
| RDS(on) | 1.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.315nF | |
| Gate Charge(Qg) | 162nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device for automotive applications and a wide variety of other applications.
Caratteristiche
Traduzione AI
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive-qualified
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 2.1902 | $ 2.19 |
| 200+ | $ 0.8474 | $ 169.48 |
| 500+ | $ 0.8181 | $ 409.05 |
| 1,000+ | $ 0.8042 | $ 804.20 |
Package Standard1000/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 1.98nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 343A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 935pF | |
| RDS(on) | 1.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.315nF | |
| Gate Charge(Qg) | 162nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 1.98nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 343A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 935pF | |
| RDS(on) | 1.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.315nF | |
| Gate Charge(Qg) | 162nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device for automotive applications and a wide variety of other applications.
Caratteristiche
Traduzione AI
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive-qualified
C533485 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IRLS3034TRLPBF | Infineon | D2PAK | 1 | $ 2.577 | ||
| IRFS7430TRLPBF | Infineon | D2PAK | 798 | $ 2.6601 | ||
| IRFS7434TRLPBF | Infineon | D2PAK | 80 | $ 2.3567 | ||
| SP60N01BGHTD | Siliup | TO-263 | 606 | $ 0.5264 | ||
| AUIRLS3034TRL | Infineon | D2PAK | 0 | $ 7.3007 | ||
| IRFS7434PBF | Infineon | D2PAK | 0 | $ 1.2931 |