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Modele EDAEasyEDA
XNRUSEMI XRS30J03D
| Producent | XNRUSEMIAsian Brands |
| Nr części prod. | XRS30J03D |
| Nr LCSC | C53069578 |
| Opak. | DFN-8L(3x3) |
| Numer Klienta | |
| Klucz. cechy | 30V 1.6V 2 N-Channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs |
| Karta Katalogowa | XNRUSEMI XRS30J03D |
| Części alternatywne | 1 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | DFN-8L(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Output Capacitance(Coss) | 240pF;475pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 30.5W;31.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;57pF | |
| RDS(on) | 5.5mΩ@10V;4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 625pF;905pF | |
| Gate Charge(Qg) | 10.3nC@10V;16nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | DFN-8L(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Output Capacitance(Coss) | 240pF;475pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 30.5W;31.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;57pF | |
| RDS(on) | 5.5mΩ@10V;4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 625pF;905pF | |
| Gate Charge(Qg) | 10.3nC@10V;16nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for reduced R<sub>DS(ON)</sub>
Zastosowania
Tłumaczenie AI
- DC-DC Converter - Power Management Function - Synchronous Rectification Application
Na stanie: 4,070
4,070 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.174$ 0.1653 | $ 0.83 |
| 50+ | $ 0.1378$ 0.1310 | $ 6.55 |
| 150+ | $ 0.1223$ 0.1162 | $ 17.43 |
| 500+ | $ 0.103$ 0.0979 | $ 48.95 |
| 2,500+ | $ 0.0944$ 0.0897 | $ 224.25 |
| 5,000+ | $ 0.0892$ 0.0848 | $ 424.00 |
Standardowa Obudowa5000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | DFN-8L(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Output Capacitance(Coss) | 240pF;475pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 30.5W;31.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;57pF | |
| RDS(on) | 5.5mΩ@10V;4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 625pF;905pF | |
| Gate Charge(Qg) | 10.3nC@10V;16nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | DFN-8L(3x3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Output Capacitance(Coss) | 240pF;475pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 30.5W;31.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;57pF | |
| RDS(on) | 5.5mΩ@10V;4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 625pF;905pF | |
| Gate Charge(Qg) | 10.3nC@10V;16nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for reduced R<sub>DS(ON)</sub>
Zastosowania
Tłumaczenie AI
- DC-DC Converter - Power Management Function - Synchronous Rectification Application
C53069578 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| XRS60J04D | XNRUSEMI | DFN-8(3x3) | 2,590 | $0.1482 $0.1559 |