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EDA-ModelleEasyEDA
NCE NCE65TF130
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE65TF130 |
| LCSC-Nr. | C502883 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 28A TO-220 |
| Datenblatt | NCE NCE65TF130 |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.07nF | |
| Gate Charge(Qg) | 37.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.07nF | |
| Gate Charge(Qg) | 37.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Merkmale
KI-Übersetzung
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Anwendungen
KI-Übersetzung
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS） LLC Half-bridge
Vorrätig: 866
866 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.6173 | $ 2.62 |
| 10+ | $ 2.128 | $ 21.28 |
| 50+ | $ 1.8597 | $ 92.99 |
| 100+ | $ 1.5558 | $ 155.58 |
| 500+ | $ 1.4208 | $ 710.40 |
| 1,000+ | $ 1.3591 | $ 1359.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.07nF | |
| Gate Charge(Qg) | 37.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 260W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.07nF | |
| Gate Charge(Qg) | 37.5nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Merkmale
KI-Übersetzung
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Anwendungen
KI-Übersetzung
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS） LLC Half-bridge
C502883 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NCE65TF099 | NCE | TO-220 | 141 | $ 3.2493 | ||
| NCE65NF099 | NCE | TO-220 | 882 | $ 3.0548 |