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EDA 모델EasyEDA
ST STW63N65DM2
| 제조업체 | |
| 제조사 품번 | STW63N65DM2 |
| LCSC 번호 | C501093 |
| 포장 | TO-247 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 650V 60A TO-247 |
| 데이터시트 | ST STW63N65DM2 |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.5nF | |
| Gate Charge(Qg) | 120nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 60A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.5nF | |
| Gate Charge(Qg) | 120nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
주요 특징
AI 번역
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
응용 분야
AI 번역
- Switching applications
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 8.4692 | $ 8.47 |
| 10+ | $ 7.6244 | $ 76.24 |
| 30+ | $ 7.1224 | $ 213.67 |
| 90+ | $ 6.6155 | $ 595.40 |
| 510+ | $ 6.3799 | $ 3253.75 |
| 990+ | $ 6.276 | $ 6213.24 |
표준 패키지30/Full Tube | ||
수량이 많을수록 더 좋은 가격?
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.5nF | |
| Gate Charge(Qg) | 120nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 60A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.5nF | |
| Gate Charge(Qg) | 120nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Ωrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
주요 특징
AI 번역
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
응용 분야
AI 번역
- Switching applications
C501093 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| STWA65N65DM2AG | ST | TO-247 | 20 | $ 13.0646 | ||
| STW70N65DM6 | ST | TO-247 | 6 | $ 27.5216 | ||
| STWA70N65DM6 | ST | TO-247 | 3 | $ 41.9949 | ||
| STW70N60M2 | ST | TO-247 | 299 | $ 4.434 | ||
| BMW65N046UE1 | Bestirpower | TO-247-3 | 150 | $ 3.789 | ||
| STW65N65DM2AG | ST | TO-247-3 | 0 | $ 9.4454 | ||
| STW70N65M2 | ST | TO-247 | 0 | $ 11.2392 | ||
| STW70N60M2-4 | ST | TO-247-3 | 0 | $ 17.7637 | ||
| NVH050N65S3F | onsemi | TO-247-3 | 0 | $ 6.9767 | ||
| NVHL040N65S3F | onsemi | TO-247-3 | 0 | $ 22.1713 |