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Modelli EDAEasyEDA
Infineon IRF7855TRPBF
| Produttore | |
| Cod. Prod. | IRF7855TRPBF |
| Cod. LCSC | C500522 |
| Imballo | SO-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET 60V 12A SO-8 |
| Scheda Tecnica | Infineon IRF7855TRPBF |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | SO-8 | |
| Output Capacitance(Coss) | 440pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.56nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | SO-8 | |
| Output Capacitance(Coss) | 440pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.56nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective Coss to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Applicazioni
Traduzione AI
- Primary Side Switch in Bridge Topology in Isolated DC-DC Converters
- Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
- Secondary Side Synchronous Rectification Switch for 15Vout
- Suitable for 48V Non-lsolated Synchronous Buck DC-DC Applications
Disponibile: 4,477
4,477 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9561 | $ 0.96 |
| 10+ | $ 0.7462 | $ 7.46 |
| 30+ | $ 0.6396 | $ 19.19 |
| 100+ | $ 0.5363 | $ 53.63 |
| 500+ | $ 0.474 | $ 237.00 |
| 1,000+ | $ 0.4412 | $ 441.20 |
Package Standard4000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | SO-8 | |
| Output Capacitance(Coss) | 440pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.56nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | SO-8 | |
| Output Capacitance(Coss) | 440pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.56nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective Coss to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Applicazioni
Traduzione AI
- Primary Side Switch in Bridge Topology in Isolated DC-DC Converters
- Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
- Secondary Side Synchronous Rectification Switch for 15Vout
- Suitable for 48V Non-lsolated Synchronous Buck DC-DC Applications
C500522 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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