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EDA-ModelleEasyEDA
Taiwan Semiconductor 1N5406G-K A0G
| Hersteller | Taiwan SemiconductorAsian Brands |
| Herst.-Teilenr. | 1N5406G-K A0G |
| LCSC-Nr. | C483906 |
| Verp. | DO-201AD |
| Kundennummer | |
| Hauptmerkm. | 600V 1 Independent 1V@3A 3A DO-201AD Single Diodes RoHS |
| Datenblatt | Taiwan Semiconductor 1N5406G-K A0G |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 8 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | DO-201AD | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 125A | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | DO-201AD | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 125A | |
| Current - Rectified | 3A |
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Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.0926 | $ 0.46 |
| 50+ | $ 0.0769 | $ 3.85 |
| 150+ | $ 0.069 | $ 10.35 |
| 500+ | $ 0.0631 | $ 31.55 |
| 2,500+ | $ 0.0584 | $ 146.00 |
| 5,000+ | $ 0.056 | $ 280.00 |
Standardgehäuse500/Full Box | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | DO-201AD | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 125A | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Taiwan Semiconductor | |
| Verp. | DO-201AD | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@600V | |
| Non-Repetitive Peak Forward Surge Current | 125A | |
| Current - Rectified | 3A |
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C483906 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| 1N5406G A0G | Taiwan Semiconductor | DO-201AD | 0 | $ 0.3838 | ||
| 1N5406GH | Taiwan Semiconductor | DO-201AD | 0 | $ 0.1328 | ||
| 1N5407G A0G | Taiwan Semiconductor | DO-201AD | 0 | $ 0.1712 | ||
| 1N5407GH | Taiwan Semiconductor | DO-201AD | 0 | $ 0.133 | ||
| 1N5408G-K A0G | Taiwan Semiconductor | DO-201AD | 0 | $ 0.1333 | ||
| 1N5408GH | Taiwan Semiconductor | DO-201AD | 0 | $ 0.133 | ||
| 1N5408G R0G | Taiwan Semiconductor | DO-201AD | 0 | $ 0.2838 | ||
| 1N5408G A0G | Taiwan Semiconductor | DO-201AD | 0 | $ 0.1259 |