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EDA-ModelleEasyEDA
VISHAY IRFBC40APBF
| Hersteller | |
| Herst.-Teilenr. | IRFBC40APBF |
| LCSC-Nr. | C466976 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 600V 6.2A TO-220AB |
| Datenblatt | VISHAY IRFBC40APBF |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 136pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.036nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 136pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.036nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This P-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy strength. These devices are suitable for switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power supply applications.
Merkmale
KI-Übersetzung
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- Compliant to RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
Vorrätig: 1,027
1,027 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3686 | $ 1.37 |
| 10+ | $ 1.1293 | $ 11.29 |
| 30+ | $ 0.9982 | $ 29.95 |
| 100+ | $ 0.849 | $ 84.90 |
| 500+ | $ 0.7835 | $ 391.75 |
| 1,000+ | $ 0.754 | $ 754.00 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 136pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.036nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 136pF | |
| Current - Continuous Drain(Id) | 6.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.036nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This P-channel enhancement-mode power MOSFET is fabricated using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy strength. These devices are suitable for switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power supply applications.
Merkmale
KI-Übersetzung
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- Compliant to RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
C466976 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRFBC40PBF | VISHAY | TO-220AB | 14 | $ 1.558 | ||
| MPC10N65 | MIRACLE POWER | TO-220 | 50 | $0.4137 $0.4354 | ||
| IRFBC40LCPBF | VISHAY | TO-220AB | 0 | $ 2.8158 | ||
| IRFBC40APBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.31 | ||
| IRFBC40LCPBF-BE3 | VISHAY | TO-220AB | 0 | $ 2.8777 | ||
| STP9NK65Z | ST | TO-220 | 0 | $ 1.3566 | ||
| IRFBC40PBF | Infineon | TO-220 | 0 | $ 9.2263 | ||
| IRFBC40R | TI | TO-220 | 0 | $ 0.9829 | ||
| FQP8N60C | onsemi | TO-220 | 0 | $ 0.427 | ||
| NTE2379 | NTE Electronics | TO-220 | 0 | $ 10.9511 |