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Zdjęcia poglądowe
Modele EDAEasyEDA
DOINGTER SC009NG-S
| Producent | DOINGTERAsian Brands |
| Nr części prod. | SC009NG-S |
| Nr LCSC | C41367293 |
| Opak. | SOP-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 12A SOP-8 |
| Karta Katalogowa | DOINGTER SC009NG-S |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.11nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.11nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Funkcje
Tłumaczenie AI
- VDS=30V, ID=12A, RDS(ON)<8mΩ@VGS=10 V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
Na stanie: 4,350
4,350 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0701$ 0.0645 | $ 0.65 |
| 100+ | $ 0.0554$ 0.0510 | $ 5.10 |
| 300+ | $ 0.0481$ 0.0443 | $ 13.29 |
| 3,000+ | $ 0.0426$ 0.0392 | $ 117.60 |
| 6,000+ | $ 0.0382$ 0.0352 | $ 211.20 |
| 9,000+ | $ 0.036$ 0.0332 | $ 298.80 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.11nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.11nF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Funkcje
Tłumaczenie AI
- VDS=30V, ID=12A, RDS(ON)<8mΩ@VGS=10 V
- Low gate charge.
- Green device available.
- Advanced high cell denity trench technology for ultra Iow RDS(ON).
- Excellent package for good heat dissipation.
C41367293 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| DOS12N03 | DOINGTER | SOP-8 | 1,710 | $0.0645 $0.0701 | ||
| DO4468 | DOINGTER | SOP-8 | 2,980 | $ 0.0742 | ||
| DOS20N03 | DOINGTER | SOP-8 | 1,620 | $0.0977 $0.1061 | ||
| DO4406A | DOINGTER | SOP-8 | 2,810 | $ 0.0618 | ||
| DOS12N04 | DOINGTER | SOP-8 | 1,295 | $ 0.1066 | ||
| DO4484 | DOINGTER | SOP-8 | 2,880 | $ 0.1067 | ||
| DOS18N03 | DOINGTER | SOP-8 | 4,120 | $ 0.0935 | ||
| DOS30N03 | DOINGTER | SOP-8 | 2,680 | $0.1142 $0.1241 | ||
| SC005NDG | DOINGTER | SOP-8 | 980 | $ 0.0825 | ||
| DO4430 | DOINGTER | SOP-8 | 3,000 | $ 0.0895 |