- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
ALLPOWER AP25N06K
| Producent | ALLPOWERAsian Brands |
| Nr części prod. | AP25N06K |
| Nr LCSC | C2995328 |
| Opak. | TO-252 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 30A TO-252 |
| Karta Katalogowa | ALLPOWER AP25N06K |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 6 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ALLPOWER | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 30mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.89nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ALLPOWER | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 30mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.89nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The 25N06 uses advanced trench technology and design to provide excellent Rps(on) with low gate charge. It can be used in a wide variety of applications.
Funkcje
Tłumaczenie AI
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAs
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Zastosowania
Tłumaczenie AI
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Na stanie: 3,010
3,010 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1676 | $ 0.84 |
| 50+ | $ 0.1521 | $ 7.61 |
| 150+ | $ 0.1443 | $ 21.65 |
| 500+ | $ 0.1385 | $ 69.25 |
| 2,500+ | $ 0.0931 | $ 232.75 |
| 5,000+ | $ 0.0908 | $ 454.00 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ALLPOWER | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 30mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.89nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ALLPOWER | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 30A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 30mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.89nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The 25N06 uses advanced trench technology and design to provide excellent Rps(on) with low gate charge. It can be used in a wide variety of applications.
Funkcje
Tłumaczenie AI
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAs
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Zastosowania
Tłumaczenie AI
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
C2995328 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| APG095N01K | ALLPOWER | TO-252 | 9,290 | $ 0.6585 | ||
| AP50N06K | ALLPOWER | TO-252-2L | 4,845 | $ 0.2639 | ||
| APG078N07K | ALLPOWER | TO-252 | 30 | $ 0.5061 | ||
| AP40N06K | ALLPOWER | TO-252 | 545 | $ 0.2399 | ||
| AP1310K | ALLPOWER | TO-252 | 1,810 | $ 0.4082 | ||
| AP40N100K | ALLPOWER | TO-252 | 4,975 | $ 0.2758 |