Zdjęcia poglądowe
Modele EDAEasyEDA
ST STTH3006DPI
| Producent | |
| Nr części prod. | STTH3006DPI |
| Nr LCSC | C2969801 |
| Opak. | DOP-3I-2 |
| Numer Klienta | |
| Klucz. cechy | Diode 600V 30A DOP-3I-2 |
| Karta Katalogowa | ST STTH3006DPI |
| Zgodność z RoHS | 3 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | ST | |
| Opak. | DOP-3I-2 | |
| Reverse Recovery Time (trr) | 45ns | |
| Diode Configuration | 1 Pair Series Connection | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 3.6V@30A | |
| Reverse Leakage Current (Ir) | 40uA@600V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 30A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | ST | |
| Opak. | DOP-3I-2 | |
| Reverse Recovery Time (trr) | 45ns | |
| Diode Configuration | 1 Pair Series Connection | |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Typ | Opis | |
|---|---|---|
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 3.6V@30A | |
| Reverse Leakage Current (Ir) | 40uA@600V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 30A |
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Opis
Tłumaczenie AI
TURBOSWITCH "H" is an ultra-high performance diode consisting of two 300V dies connected in series. The TURBOSWITCH "H" series significantly reduces the losses of the associated MOSFET during high dIF/dt operation.
Funkcje
Tłumaczenie AI
- Ideal as boost diodes in continuous mode PFC and hard-switching applications
- Designed for high dIF/dt operation; ultra-fast recovery current competitive with SiC devices, enabling reduction in MOSFET and heatsink size
- Internally ceramic-isolated device with two 300V diodes sharing identical thermal conditions
- Isolation (2500VRMS) allows mounting on the same heatsink as the MOSFET, with flexibility for common or separate heatsink cooling
- Internal diode static and dynamic balancing ensured by design
- Package capacitance: C=16pF
Zastosowania
Tłumaczenie AI
- Continuous mode power factor corrector
- Boost diode applications under hard-switching conditions
Na stanie: 10
10 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 10.924 | $ 10.92 |
| 10+ | $ 10.7713 | $ 107.71 |
| 30+ | $ 10.6706 | $ 320.12 |
| 100+ | $ 10.5682 | $ 1056.82 |
Standardowa Obudowa30/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | ST | |
| Opak. | DOP-3I-2 | |
| Reverse Recovery Time (trr) | 45ns | |
| Diode Configuration | 1 Pair Series Connection | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 3.6V@30A | |
| Reverse Leakage Current (Ir) | 40uA@600V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 30A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | ST | |
| Opak. | DOP-3I-2 | |
| Reverse Recovery Time (trr) | 45ns | |
| Diode Configuration | 1 Pair Series Connection | |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Typ | Opis | |
|---|---|---|
| Operating Junction Temperature Range | - | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 3.6V@30A | |
| Reverse Leakage Current (Ir) | 40uA@600V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 30A |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
TURBOSWITCH "H" is an ultra-high performance diode consisting of two 300V dies connected in series. The TURBOSWITCH "H" series significantly reduces the losses of the associated MOSFET during high dIF/dt operation.
Funkcje
Tłumaczenie AI
- Ideal as boost diodes in continuous mode PFC and hard-switching applications
- Designed for high dIF/dt operation; ultra-fast recovery current competitive with SiC devices, enabling reduction in MOSFET and heatsink size
- Internally ceramic-isolated device with two 300V diodes sharing identical thermal conditions
- Isolation (2500VRMS) allows mounting on the same heatsink as the MOSFET, with flexibility for common or separate heatsink cooling
- Internal diode static and dynamic balancing ensured by design
- Package capacitance: C=16pF
Zastosowania
Tłumaczenie AI
- Continuous mode power factor corrector
- Boost diode applications under hard-switching conditions
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |