onsemi FQA28N50

제조업체	onsemi
제조사 품번	FQA28N50
LCSC 번호	C2720
포장	TO-3P-3
고객 번호
주요 제원	MOSFET N-CH 500V 28.4A TO-3P-3
데이터시트	onsemi FQA28N50
RoHS 준수	3개 문서 이용 가능
대체 부품	10

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	onsemi
포장	TO-3P-3
Output Capacitance(Coss)	830pF
Pd - Power Dissipation	310W
Configuration	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	28.4A
Gate Threshold Voltage (Vgs(th))	5V
Reverse Transfer Capacitance (Crss@Vds)	80pF
RDS(on)	160mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	5.6nF
Gate Charge(Qg)	140nC@10V
Vgs	±30V
Type	N-Channel

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	onsemi
포장	TO-3P-3
Output Capacitance(Coss)	830pF
Pd - Power Dissipation	310W
Configuration	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	28.4A

도움말 및 피드백유사 제품 보기 (0) >

개요

AI 번역

These N-Channel enhancement mode power field effect transistors are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been especially designed to minimize on-resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well suited for use in high efficiency switched mode power supplies, power factor correction, motor drives, and welding equipment.

주요 특징

AI 번역

28.4A, 500V, R DS(on) = 0.16Ω at V GS = 10V
Low gate charge (typical 110nC)
Low C rss (typical 60pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

응용 분야

AI 번역

High-efficiency switch-mode power supplies
Power factor correction
Motor drives
Welding machines

품절

재입고 알림

최소값: 1배수: 1판매 단위: Piece

BOM 목록에 추가

수량	단가(참고용)	총액
1+	$ 4.2675	$ 4.27
10+	$ 3.6611	$ 36.61
30+	$ 3.0761	$ 92.28
90+	$ 2.7123	$ 244.11
510+	$ 2.5435	$ 1297.19
1,200+	$ 2.4681	$ 2961.72
표준 패키지30/Full Tube

수량이 많을수록 더 좋은 가격?

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	onsemi
포장	TO-3P-3
Output Capacitance(Coss)	830pF
Pd - Power Dissipation	310W
Configuration	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	28.4A
Gate Threshold Voltage (Vgs(th))	5V
Reverse Transfer Capacitance (Crss@Vds)	80pF
RDS(on)	160mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	5.6nF
Gate Charge(Qg)	140nC@10V
Vgs	±30V
Type	N-Channel

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	onsemi
포장	TO-3P-3
Output Capacitance(Coss)	830pF
Pd - Power Dissipation	310W
Configuration	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	500V
Current - Continuous Drain(Id)	28.4A

도움말 및 피드백유사 제품 보기 (0) >

개요

AI 번역

주요 특징

AI 번역

28.4A, 500V, R DS(on) = 0.16Ω at V GS = 10V
Low gate charge (typical 110nC)
Low C rss (typical 60pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

응용 분야

AI 번역

High-efficiency switch-mode power supplies
Power factor correction
Motor drives
Welding machines

C2720 EasyEDA 라이브러리

This image shows the pinout diagram of FQA28N50

This image shows the footprint diagram of FQA28N50

컴플라이언스 & 수출 코드

타입	세부사항
RoHS	ROHS3 Compliant
ECCN	EAR99
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

타입	세부사항
RoHS	ROHS3 Compliant
ECCN	EAR99
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000

타입	세부사항
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

대체 부품

MPN	제조사	포장	재고 현황	단가
28N50	HXY MOSFET	TO-3P	76	$1.3464 $1.496
IXTQ44N50P	Littelfuse/IXYS	TO-3P-3	5	$ 26.1008
OSH40N65	OSEN	TO-3PNB	2	$ 1.5774
FDA28N50	onsemi	TO-3P-3	789	$ 3.3121
FQA24N50-HXY	HXY MOSFET	TO-3P	169	$3.5039 $3.6883
25N50	HXY MOSFET	TO-3P	18	$ 1.1849
HFQA28N50	HXY MOSFET	TO-3P	2	$2.1237 $2.2354
FCA35N60	onsemi	TO-3P	0	$ 13.9319
IXTQ36N50P	Littelfuse/IXYS	TO-3P-3	0	$ 3.601
FDA50N50	onsemi	TO-3P-3	0	$ 10.5682