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HL(Haolin Elec) HR2N60(AHO) product image
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HL(Haolin Elec) HR2N60(AHO)

Hersteller
HL(Haolin Elec)Asian Brands
Herst.-Teilenr.
HR2N60(AHO)
LCSC-Nr.
C2689005
Verp.
TO-225-3
Kundennummer
Hauptmerkm.
44W 600V 2A 4V 5Ω@10V 1 N-channel N-Channel TO-225-3 Single FETs, MOSFETs
DatenblattHL(Haolin Elec) HR2N60(AHO)
Derzeit nicht verfügbar
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerHL(Haolin Elec)
Verp.TO-225-3
Output Capacitance(Coss)48pF
Pd - Power Dissipation44W
Configuration-
Drain to Source Voltage600V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))4V
RDS(on)5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)365pF
Gate Charge(Qg)6nC
Vgs±30V
TypeN-Channel
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Beschreibung

KI-Übersetzung

This series of devices employs Super Trench II technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. With ultra-low drain-source on-resistance (RDS(ON)) and gate charge (Qg), both conduction and switching power losses are minimized. These devices are ideal for high-frequency switching and synchronous rectification.

Merkmale

KI-Übersetzung
  • Innovative Design
  • Superior avalanche ruggedness technology
  • Robust gate oxide technology
  • Ultra-low intrinsic capacitance
  • Excellent switching characteristics
  • Unmatched gate charge: 6.0 nC (typical)
  • Extended safe operating area
  • Lower RDS(ON): 4.2 Ω (typical) @ VGS = 10V
  • 100% avalanche tested

Anwendungen

KI-Übersetzung
  • DC/DC converter
  • Ideal for high-frequency switching and synchronous rectification