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Infineon IRFB4020PBF
| Hersteller | |
| Herst.-Teilenr. | IRFB4020PBF |
| LCSC-Nr. | C2649 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 200V 18A TO-220AB |
| Datenblatt | Infineon IRFB4020PBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 91pF | |
| Pd - Power Dissipation | 100W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 91pF | |
| Pd - Power Dissipation | 100W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Merkmale
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8096 | $ 0.81 |
| 10+ | $ 0.6507 | $ 6.51 |
| 50+ | $ 0.5704 | $ 28.52 |
| 100+ | $ 0.4901 | $ 49.01 |
| 500+ | $ 0.4425 | $ 221.25 |
| 1,000+ | $ 0.4196 | $ 419.60 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 91pF | |
| Pd - Power Dissipation | 100W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220AB | |
| Output Capacitance(Coss) | 91pF | |
| Pd - Power Dissipation | 100W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Merkmale
- Key parameters optimized for Class-D audio amplifier applications
- Low RDSON for improved efficiency
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- 175°C operating junction temperature for ruggedness
- Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier
C2649 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| WTM20N65AP | WPMtek | TO-220 | 49 | $ 1.1387 | ||
| WTM20N65CP | WPMtek | TO-220 | 50 | $ 1.4279 | ||
| IRFB4020PBF-JSM | JSMSEMI | TO-220-3L | 6 | $0.6094 $0.6414 | ||
| CS18N20A8R | CRMICRO | TO-220AB | 975 | $ 0.5359 | ||
| 18NM65L-TA3-T | UTC | TO-220 | 464 | $ 0.7678 | ||
| YFW18N20AC | YFW | TO-220C | 50 | $0.4001 $0.5001 | ||
| IXFP34N65X3 | Littelfuse/IXYS | TO-220-3 | 5 | $ 8.9967 | ||
| DOP18N20 | DOINGTER | TO-220 | 910 | $ 0.3778 | ||
| STP36N60M6 | ST | TO-220 | 0 | $ 6.1005 | ||
| IXFP36N30P3 | Littelfuse | TO-220-3 | 0 | $ 1.0047 |