YFW DTC143EE
| Hersteller | YFWAsian Brands |
| Herst.-Teilenr. | DTC143EE |
| LCSC-Nr. | C25836728 |
| Verp. | SOT-523 |
| Kundennummer | |
| Hauptmerkm. | Digital Transistors (Built-in Resistors) |
| Datenblatt | YFW DTC143EE |
| RoHS-Konformität | 1 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | YFW | |
| Verp. | SOT-523 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | YFW | |
| Verp. | SOT-523 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
- They also have the advantage of almost completely eliminating parasitic effects
- Only the on/off conditions need to be set for operation, making device design easy
Vorrätig: 1,720
1,720 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0271$ 0.0258 | $ 0.52 |
| 200+ | $ 0.0209$ 0.0199 | $ 3.98 |
| 600+ | $ 0.0174$ 0.0166 | $ 9.96 |
| 3,000+ | $ 0.0164$ 0.0156 | $ 46.80 |
| 9,000+ | $ 0.0146$ 0.0139 | $ 125.10 |
| 21,000+ | $ 0.0136$ 0.0130 | $ 273.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | YFW | |
| Verp. | SOT-523 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | YFW | |
| Verp. | SOT-523 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | - | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 20 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 6.11kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
- They also have the advantage of almost completely eliminating parasitic effects
- Only the on/off conditions need to be set for operation, making device design easy
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



