HXY MOSFET CSD17579Q3A-HXY
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | CSD17579Q3A-HXY |
| Nr LCSC | C22367278 |
| Opak. | DFN3x3-8L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 60A DFN3x3-8L |
| Karta Katalogowa | HXY MOSFET CSD17579Q3A-HXY |
| Części alternatywne | 20 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN3x3-8L | |
| Output Capacitance(Coss) | 131pF | |
| Pd - Power Dissipation | 37.5W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN3x3-8L | |
| Output Capacitance(Coss) | 131pF | |
| Pd - Power Dissipation | 37.5W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Na stanie: 10
10 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1862$ 0.1769 | $ 0.88 |
| 50+ | $ 0.1462$ 0.1389 | $ 6.95 |
| 150+ | $ 0.1291$ 0.1227 | $ 18.41 |
| 500+ | $ 0.1077$ 0.1024 | $ 51.20 |
| 2,500+ | $ 0.0982$ 0.0933 | $ 233.25 |
| 5,000+ | $ 0.0925$ 0.0879 | $ 439.50 |
Standardowa Obudowa5000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN3x3-8L | |
| Output Capacitance(Coss) | 131pF | |
| Pd - Power Dissipation | 37.5W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN3x3-8L | |
| Output Capacitance(Coss) | 131pF | |
| Pd - Power Dissipation | 37.5W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
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C22367278 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| AON7752 | HXY MOSFET | DFN-8L(3x3) | 4,205 | $0.1601 $0.1685 | ||
| CSD17551Q3A-HXY | HXY MOSFET | DFN-8L(3x3) | 506 | $0.4111 $0.4327 | ||
| SISA96DN-T1-GE3-HXY | HXY MOSFET | DFN3x3-8L | 265 | $0.1193 $0.1355 | ||
| AONR32314-HXY | HXY MOSFET | DFN-8L(3x3) | 105 | $0.2236 $0.2795 | ||
| SQS482EN-T1_GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 99 | $0.3325 $0.4156 | ||
| DMT3009LFVW-7-HXY | HXY MOSFET | DFN-8L(3x3) | 99 | $0.3325 $0.4156 | ||
| SIS782DN-T1-GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 99 | $0.3988 $0.4984 | ||
| DMT3009LFVWQ-7-HXY | HXY MOSFET | DFN-8L(3x3) | 99 | $0.3325 $0.4156 | ||
| DMT3006LFV-13-HXY | HXY MOSFET | DFN-8L(3x3) | 99 | $0.4507 $0.5633 | ||
| SIS472DN-T1-GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 98 | $0.4442 $0.5552 | ||
| SIS472ADN-T1-GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 90 | $0.2631 $0.3288 | ||
| NTTFS4C13NTAG-HXY | HXY MOSFET | DFN-8L(3x3) | 90 | $0.2401 $0.3001 | ||
| DI040N03PT-HXY | HXY MOSFET | DFN-8L(3x3) | 90 | $0.2894 $0.3617 | ||
| DMN3010LFG-7-HXY | HXY MOSFET | DFN-8L(3x3) | 90 | $0.2302 $0.2877 | ||
| RQ3E120BNTB-HXY | HXY MOSFET | DFN-8L(3x3) | 89 | $0.4064 $0.508 | ||
| RQ3E120GNTB-HXY | HXY MOSFET | DFN-8L(3x3) | 85 | $0.2763 $0.3453 | ||
| CSD17578Q3A-HXY | HXY MOSFET | DFN-8(3x3) | 76 | $0.4096 $0.4311 | ||
| RQ3E100BNTB1-HXY | HXY MOSFET | DFN-8L(3x3) | 65 | $0.4038 $0.5047 | ||
| PXN9R0-30QLJ-HXY | HXY MOSFET | DFN-8L(3x3) | 60 | $0.2500 $0.3124 | ||
| AONR36328 | HXY MOSFET | DFN-8L(3x3) | 0 | $ 0.1932 |



