ISSI IS61LV6416-10TLI-TR

The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE (overline) is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE (overline) and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB (overline)) and Lower Byte (LB (overline overline)) access. The IS61LV6416/IS61LV6416L is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).

• High-speed access time: 8, 10, 12 ns
• CMOS low power operation
• 61LV6416: 75 mW (typical) operating current, 0.5 mW (typical) standby current
• 61LV6416L: 65 mW (typical) operating current, 50 μW (typical) standby current
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available