MICROCHIP APT25GN120B2DQ2G
| 제조업체 | |
| 제조사 품번 | APT25GN120B2DQ2G |
| LCSC 번호 | C17488563 |
| 포장 | TO-247-3 |
| 고객 번호 | |
| 주요 제원 | 272W 67A 1.2kV TO-247-3 Single IGBTs RoHS |
| 데이터시트 | MICROCHIP APT25GN120B2DQ2G |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | MICROCHIP | |
| 포장 | TO-247-3 | |
| Pd - Power Dissipation | 272W | |
| Td(off) | 280ns | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 67A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | 2.15mJ | |
| Turn-On Energy (Eon) | 1.49mJ | |
| Input Capacitance(Cies) | 1.8nF | |
| Output Capacitance(Coes) | 105pF | |
| Gate Charge(Qg) | 155nC |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | MICROCHIP | |
| 포장 | TO-247-3 | |
| Pd - Power Dissipation | 272W | |
| Td(off) | 280ns | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 67A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| 타입 | 설명 | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | 2.15mJ | |
| Turn-On Energy (Eon) | 1.49mJ | |
| Input Capacitance(Cies) | 1.8nF | |
| Output Capacitance(Coes) | 105pF | |
| Gate Charge(Qg) | 155nC |
개요
These IGBTs employ the latest non-punch-through (NPT) field-stop technology, featuring very short and low-amplitude tail current and low turn-off energy (Eoff). The trench gate design delivers excellent collector-emitter on-state voltage (VCE(on)) performance. Easy paralleling is facilitated by very tight parameter distribution and a slightly positive VCE(on) temperature coefficient. The built-in gate resistor ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes switching losses.
주요 특징
- 1200V NPT field-stop
- Trench gate: low collector-emitter on-state voltage (V<sub>CE(on)</sub>)
- Easy to parallel
- 10μs short-circuit capability
- Integrated gate resistor: low EMI, high reliability
응용 분야
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 26.4553 | $ 26.46 |
| 200+ | $ 10.5558 | $ 2111.16 |
| 500+ | $ 10.2044 | $ 5102.20 |
| 1,000+ | $ 10.0302 | $ 10030.20 |
표준 패키지30/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | MICROCHIP | |
| 포장 | TO-247-3 | |
| Pd - Power Dissipation | 272W | |
| Td(off) | 280ns | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 67A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | 2.15mJ | |
| Turn-On Energy (Eon) | 1.49mJ | |
| Input Capacitance(Cies) | 1.8nF | |
| Output Capacitance(Coes) | 105pF | |
| Gate Charge(Qg) | 155nC |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | MICROCHIP | |
| 포장 | TO-247-3 | |
| Pd - Power Dissipation | 272W | |
| Td(off) | 280ns | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 67A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| 타입 | 설명 | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.7V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 350ns | |
| Switching Energy(Eoff) | 2.15mJ | |
| Turn-On Energy (Eon) | 1.49mJ | |
| Input Capacitance(Cies) | 1.8nF | |
| Output Capacitance(Coes) | 105pF | |
| Gate Charge(Qg) | 155nC |
개요
These IGBTs employ the latest non-punch-through (NPT) field-stop technology, featuring very short and low-amplitude tail current and low turn-off energy (Eoff). The trench gate design delivers excellent collector-emitter on-state voltage (VCE(on)) performance. Easy paralleling is facilitated by very tight parameter distribution and a slightly positive VCE(on) temperature coefficient. The built-in gate resistor ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes switching losses.
주요 특징
- 1200V NPT field-stop
- Trench gate: low collector-emitter on-state voltage (V<sub>CE(on)</sub>)
- Easy to parallel
- 10μs short-circuit capability
- Integrated gate resistor: low EMI, high reliability
응용 분야
Welding, induction heating, solar inverters, switching power supplies, motor drives, uninterruptible power supplies
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| JNG40T120HIRU2 | JIAENSEMI | TO-247 | 31 | $ 3.5921 | ||
| STGWA40M120DF3 | ST | TO-247 | 84 | $ 3.8127 | ||
| STGW40M120DF3 | ST | TO-247 | 6 | $ 8.9148 | ||
| APT25GN120BG | MICROCHIP | TO-247 | 0 | $ 17.911 | ||
| APT50GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 27.4005 | ||
| IXYH40N120A4 | Littelfuse/IXYS | TO-247(IXYH) | 0 | $ 10.3526 | ||
| NGTB40N120L3WG | onsemi | TO-247-3 | 0 | $ 3.3711 | ||
| IRG7PH42U-EP | Infineon | TO-247AD | 0 | $ 9.7582 | ||
| STGYA50M120DF3 | ST | TO-247-3 | 0 | $ 13.9604 | ||
| STGYA50H120DF2 | ST | TO-247 | 0 | $ 7.5421 |