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Infineon IRF7201TRPBF
| Hersteller | |
| Herst.-Teilenr. | IRF7201TRPBF |
| LCSC-Nr. | C169082 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 7.3A SO-8 |
| Datenblatt | Infineon IRF7201TRPBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 260pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 260pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
Fifth Generation HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Merkmale
- Generation V Technology
- Ultra Low On-Resistance
- N-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.251 | $ 1.25 |
| 10+ | $ 1.0707 | $ 10.71 |
| 30+ | $ 0.9797 | $ 29.39 |
| 100+ | $ 0.8903 | $ 89.03 |
| 500+ | $ 0.8367 | $ 418.35 |
| 1,000+ | $ 0.8091 | $ 809.10 |
Standardgehäuse4000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 260pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | SO-8 | |
| Output Capacitance(Coss) | 260pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
Fifth Generation HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Merkmale
- Generation V Technology
- Ultra Low On-Resistance
- N-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
C169082 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRF7201TR(UMW) | UMW | SOP-8 | 1,335 | $ 0.1306 | ||
| DOS9N03 | DOINGTER | SOP-8 | 2,640 | $0.0448 $0.0487 | ||
| TPM3013NS8 | TECH PUBLIC | SOIC-8 | 853 | $ 0.2744 | ||
| CMS8447B | Cmos | SOP-8 | 1,250 | $0.1417 $0.1491 | ||
| ME4894-G | MATSUKI | SOP-8 | 835 | $ 0.2178 | ||
| CEM3172 | CET(Chino-Excel Tech) | SOP-8 | 15 | $ 0.1913 | ||
| TPM3013NS8-6 | TECH PUBLIC | SOP-8 | 500 | $ 0.2605 | ||
| HSM3002 | HUASHUO | SOP-8 | 0 | $ 0.0791 | ||
| SI4416DY | onsemi | SOIC-8 | 0 | $ 0.2208 | ||
| STS7NF60L | ST | SO-8 | 0 | $ 3.6993 |