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EDA-ModelleEasyEDA
KEC KRC246S-RTK/P
| Hersteller | |
| Herst.-Teilenr. | KRC246S-RTK/P |
| LCSC-Nr. | C112796 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | Epitaxial Planar NPN Transistor High Current Switching and Interface Circuit Application |
| Datenblatt | KEC KRC246S-RTK/P |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | KEC | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 800mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 4.5 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 300mV | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | KEC | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 800mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 4.5 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 300mV | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- With Built-in Bias Resistors.
- Simplify Circuit Design.
- Reduce a Quantity of Parts and Manufacturing Process.
- High Output Current: 800mA.
Anwendungen
KI-Übersetzung
- HIGH CURRENT SWITCHING APPLICATION.
- INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
Vorrätig: 8,980
8,980 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0579 | $ 0.58 |
| 100+ | $ 0.0473 | $ 4.73 |
| 300+ | $ 0.042 | $ 12.60 |
| 3,000+ | $ 0.0336 | $ 100.80 |
| 6,000+ | $ 0.0304 | $ 182.40 |
| 9,000+ | $ 0.0288 | $ 259.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | KEC | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 800mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 4.5 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 300mV | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | KEC | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 800mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 4.5 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 300mV | |
| Operating temperature | - | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- With Built-in Bias Resistors.
- Simplify Circuit Design.
- Reduce a Quantity of Parts and Manufacturing Process.
- High Output Current: 800mA.
Anwendungen
KI-Übersetzung
- HIGH CURRENT SWITCHING APPLICATION.
- INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
C112796 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| RN1425TE85LF | TOSHIBA | TO-236-3(SOT-23-3) | 24 | $ 0.7896 |