RENESAS 71256L25Y

The IDT 71256 is a 262,144-bit high-speed SRAM organized as 32K × 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access time is as fast as 20ns, with typical power dissipation of only 350mW. The device also offers a low-power standby mode. When the chip select signal (CS̄) is deasserted high, the circuit automatically enters and remains in low-power standby mode as long as CS̄ stays high. In full standby mode, typical power dissipation of the low-power device is less than 15μW. This feature significantly reduces system-level power consumption and thermal management costs. The low-power (L) version also supports battery-backup data retention, with typical power dissipation of only 5μW when powered by a 2V battery. The IDT 71256 is available in 28-pin (300 or 600 mil) ceramic DIP, 28-pin 300 mil SOJ, 28-pin (600 mil) plastic DIP, and 32-pin leadless chip carrier packages, enabling high board-level packaging density.

• High-speed address/chip select access times
  • Industrial grade: 25/35ns (max)
  • Commercial grade: 20/25/35ns (max) in low-power mode only
• Low-power operation
• Battery backup operation - 2V data retention
• Fabricated using advanced high-performance CMOS technology
• Inputs and outputs directly TTL-compatible
• Available in standard 28-pin (300 or 600 mil) ceramic DIP, 28-pin (600 mil) plastic DIP, 28-pin (300 mil) small outline J-lead, and 32-pin leadless chip carrier packages