VISHAY SI7108DN-T1-E3

제조업체	VISHAY
제조사 품번	SI7108DN-T1-E3
LCSC 번호	C6679652
포장	-
고객 번호
주요 제원	20V 14A 2V 1.5W 4.9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS
데이터시트	VISHAY SI7108DN-T1-E3

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	VISHAY
포장	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	14A
Gate Threshold Voltage (Vgs(th))	2V
Pd - Power Dissipation	1.5W
RDS(on)	4.9mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	30nC@4.5V

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	VISHAY
포장	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	14A

AI 번역

Halogen-free option available
Power MOSFET with 2nd generation TrenchFET technology, featuring ultra-low on-resistance
New low thermal resistance PowerPAK package, height only 1.07 mm
100% gate resistance (Rg) tested

AI 번역

품절

재입고 알림

최소값: 1배수: 1판매 단위: Piece

BOM 목록에 추가

수량이 많을수록 더 좋은 가격?

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	VISHAY
포장	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	14A
Gate Threshold Voltage (Vgs(th))	2V
Pd - Power Dissipation	1.5W
RDS(on)	4.9mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	30nC@4.5V

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	VISHAY
포장	-
Operating Temperature	-55℃~+150℃
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	14A

AI 번역

Halogen-free option available
Power MOSFET with 2nd generation TrenchFET technology, featuring ultra-low on-resistance
New low thermal resistance PowerPAK package, height only 1.07 mm
100% gate resistance (Rg) tested

AI 번역