- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi NVTFS5C680NLWFTAG
| Produttore | |
| Cod. Prod. | NVTFS5C680NLWFTAG |
| Cod. LCSC | C604647 |
| Imballo | WDFN-8(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 60V 20A WDFN-8(3.3x3.3) |
| Scheda Tecnica | onsemi NVTFS5C680NLWFTAG |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 161pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 26.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 327pF | |
| Gate Charge(Qg) | 2.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 161pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 26.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 327pF | |
| Gate Charge(Qg) | 2.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Small Footprint (3.3 x 3.3 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS5C680NLWF − Wettable Flanks Product
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
Disponibile: 10
10 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.3123 | $ 1.31 |
| 10+ | $ 1.105 | $ 11.05 |
| 30+ | $ 1.0029 | $ 30.09 |
| 100+ | $ 0.8992 | $ 89.92 |
| 500+ | $ 0.8393 | $ 419.65 |
| 1,500+ | $ 0.8069 | $ 1210.35 |
Package Standard1500/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 161pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 26.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 327pF | |
| Gate Charge(Qg) | 2.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 161pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 26.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 327pF | |
| Gate Charge(Qg) | 2.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Small Footprint (3.3 x 3.3 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS5C680NLWF − Wettable Flanks Product
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
C604647 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NVTFS5C680NLTAG | onsemi | WDFN-8(3.3x3.3) | 66 | $ 1.3173 | ||
| NTTFS5C680NLTAG | onsemi | WDFN-8-EP(3.3x3.3) | 10 | $ 0.1425 | ||
| HSBB30N06 | HUASHUO | PRPAK-8(3x3) | 90 | $ 0.1183 | ||
| LWT1H36AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 4,770 | $ 0.1614 | ||
| DMTH10H032LFVWQ-13 | DIODES | PowerDI3333-8 | 129 | $ 1.6247 | ||
| DMTH10H032LFVW-7 | DIODES | PowerDI3333-8 | 25 | $ 1.5451 | ||
| DMTH10H032LFVW-13 | DIODES | PowerDI3333-8 | 10 | $ 1.5629 | ||
| AGM1030AP | AGMSEMI | PDFN3.3x3.3-8 | 0 | $ 0.2045 | ||
| MCG20N08-TP | MCC | DFN-8(3.3x3.3) | 0 | $ 0.554 | ||
| XR30N06D | XNRUSEMI | PDFN3333-8L | 0 | $0.1106 $0.1164 |