onsemi NRVBA340T3G-VF01
| Produttore | |
| Cod. Prod. | NRVBA340T3G-VF01 |
| Cod. LCSC | C604273 |
| Imballo | SMA |
| Numero Cliente | |
| Attr. chiave | 40V 1 Independent 450mV@3A 3A SMA Single Diodes |
| Scheda Tecnica | onsemi NRVBA340T3G-VF01 |
| Parti alternative | 20 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMA | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 450mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Current - Rectified | 3A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMA | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Independent |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 450mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Current - Rectified | 3A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
Descrizione
Employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Caratteristiche
- Small Compact Surface Mountable Package with J- Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Guardring for Stress Protection
- NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.4214 | $ 0.42 |
| 200+ | $ 0.1631 | $ 32.62 |
| 500+ | $ 0.1574 | $ 78.70 |
| 1,000+ | $ 0.1546 | $ 154.60 |
Package Standard5000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMA | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 450mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Current - Rectified | 3A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | SMA | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Independent |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - Forward(Vf@If) | 450mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Current - Rectified | 3A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
Descrizione
Employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Caratteristiche
- Small Compact Surface Mountable Package with J- Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Guardring for Stress Protection
- NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MBRA340T3G | onsemi | SMA(DO-214AC) | 135,700 | $ 0.2165 | ||
| SSL34 | Jingdao Microelectronics | SMA | 21,670 | $ 0.0754 | ||
| SS36L | JUXING | DO-214AC(SMA) | 3,220 | $0.0472 $0.0555 | ||
| SS56L | JSCJ | SMAG | 14,200 | $ 0.1895 | ||
| SS54L | JSCJ | SMAG | 10,910 | $ 0.1752 | ||
| SS34L | Jingdao Microelectronics | SMA | 4,540 | $ 0.0602 | ||
| SDT3A45SA-13 | DIODES | SMA | 5 | $ 0.2489 | ||
| SK34A | Suzhou Good-Ark Elec | SMA(DO-214AC) | 17,440 | $ 0.0777 | ||
| MBRA340T3G | Tokmas | DO-214AC | 90,190 | $0.0621 $0.0689 | ||
| SS34 | Slkor | SMA(DO-214AC) | 37,140 | $ 0.0399 | ||
| SS34L | XUMAO | SMA | 5,700 | $0.0555 $0.0616 | ||
| SSL34A | YANGJIE | SMA(DO-214AC) | 4,795 | $ 0.0901 | ||
| PL34A | NH | DO-214AC(SMA) | 4,290 | $ 0.065 | ||
| B340LA-13-F | DIODES | SMA(DO-214AC) | 4,100 | $ 0.3501 | ||
| SS34L | JUXING | DO-214AC(SMA) | 870 | $0.0525 $0.0749 | ||
| SL34A-TP | MCC | SMA(DO-214AC) | 100 | $ 0.1605 | ||
| SS54L | XUMAO | SMA | 5,005 | $0.0778 $0.0864 | ||
| SSL345 | Jingdao Microelectronics | SMA | 0 | $ 0.0487 | ||
| SS545L | DIYI Elec Tech | SMA | 0 | $ 0.1445 | ||
| SDT5A50SA-13 | DIODES | SMA | 0 | $ 0.1732 |

