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TOSHIBA TK31V60X,LQ
| Hersteller | |
| Herst.-Teilenr. | TK31V60X,LQ |
| LCSC-Nr. | C5961301 |
| Verp. | DFN-4-EP(8x8) |
| Kundennummer | |
| Hauptmerkm. | 600V 30.8A 3.5V 240W 98mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS |
| Datenblatt | TOSHIBA TK31V60X,LQ |
| Alternativteile | 8 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 30.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 240W | |
| RDS(on) | 98mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3nF | |
| Gate Charge(Qg) | 65nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 30.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 240W | |
| RDS(on) | 98mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3nF | |
| Gate Charge(Qg) | 65nC@10V |
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Beschreibung
KI-Übersetzung
200 W LDMOS power transistor for electronic applications, operating frequency range 1030 MHz to 1090 MHz.
Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON) = 0.078Ω (typ.) with super-junction DTMOS structure
- Low capacitance with high-speed switching capability
- Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
Anwendungen
KI-Übersetzung
- Switching regulator
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 5.6935 | $ 5.69 |
| 200+ | $ 2.273 | $ 454.60 |
| 500+ | $ 2.1968 | $ 1098.40 |
| 1,000+ | $ 2.1587 | $ 2158.70 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 30.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 240W | |
| RDS(on) | 98mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3nF | |
| Gate Charge(Qg) | 65nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 30.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 240W | |
| RDS(on) | 98mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3nF | |
| Gate Charge(Qg) | 65nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
200 W LDMOS power transistor for electronic applications, operating frequency range 1030 MHz to 1090 MHz.
Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON) = 0.078Ω (typ.) with super-junction DTMOS structure
- Low capacitance with high-speed switching capability
- Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
Anwendungen
KI-Übersetzung
- Switching regulator
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| TK31V60W5,LVQ | TOSHIBA | DFN-4-EP(8x8) | 8 | $ 10.7031 | ||
| FCMT080N65S3 | onsemi | TDFN-4(8x8) | 12 | $ 7.6618 | ||
| NTMT064N65S3H | onsemi | TDFN-4(8x8) | 6 | $7.7488 $9.4497 | ||
| IPL65R070C7 | Infineon | VSON-4(8x8) | 2 | $5.7826 $8.0313 | ||
| TK31V60W,LVQ | TOSHIBA | DFN-4-EP(8x8) | 0 | $ 8.3654 | ||
| IPL60R104C7 | Infineon | VSON-4(8x8) | 0 | $ 3.4027 | ||
| NTMT095N65S3H | onsemi | TDFN-4(8x8) | 0 | $ 3.5608 | ||
| NTMT061N60S5F | onsemi | TDFN4-2(8x8) | 0 | $ 9.6243 |