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Modele EDAEasyEDA
Infineon IPD50R1K4CE
| Producent | |
| Nr części prod. | IPD50R1K4CE |
| Nr LCSC | C536784 |
| Opak. | TO-252-3 |
| Numer Klienta | |
| Klucz. cechy | 550V 4.8A 3.5V 42W 1.4Ω@13V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Infineon IPD50R1K4CE |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@400V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@400V |
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Opis
Tłumaczenie AI
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, based on the Super Junction (SJ) principle. CoolMOS CE is a cost-optimized platform designed for cost-sensitive applications in the consumer and lighting markets while meeting the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, delivering the best cost-reduction-to-performance ratio on the market.
Funkcje
Tłumaczenie AI
- Ultra-low losses due to extremely low figure-of-merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Zastosowania
Tłumaczenie AI
- PFC stage, hard-switching PWM stage, and resonant switching stage for devices such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4387 | $ 0.44 |
| 10+ | $ 0.4322 | $ 4.32 |
| 30+ | $ 0.429 | $ 12.87 |
| 100+ | $ 0.4241 | $ 42.41 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@400V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@400V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, based on the Super Junction (SJ) principle. CoolMOS CE is a cost-optimized platform designed for cost-sensitive applications in the consumer and lighting markets while meeting the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, delivering the best cost-reduction-to-performance ratio on the market.
Funkcje
Tłumaczenie AI
- Ultra-low losses due to extremely low figure-of-merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Zastosowania
Tłumaczenie AI
- PFC stage, hard-switching PWM stage, and resonant switching stage for devices such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
C536784 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| MOT7N70D | MOT | TO-252 | 2,170 | $0.1709 $0.1898 | ||
| DOD8N65S | DOINGTER | TO-252 | 200 | $ 0.4018 | ||
| SVF6N60DTR | Hangzhou Silan Microelectronics | TO-252-2L | 14 | $ 0.6158 | ||
| DOD15N65S | DOINGTER | TO-252 | 730 | $ 0.6548 | ||
| IPD70R600P7S | Infineon | TO-252-3 | 11 | $ 0.5458 | ||
| IPD60R360P7S | Infineon | TO-252-3 | 9,662 | $ 0.4427 | ||
| IPD60R360PFD7S | Infineon | TO-252-3 | 0 | $ 1.1461 | ||
| IPD65R1K5CE | Infineon | TO-252-3 | 0 | $ 0.6159 | ||
| ASD65R550E | ANHI | TO-252 | 0 | $ 0.5703 | ||
| IPD60R360P7ATMA1 | Infineon | TO-252-3 | 0 | $ 1.8489 |