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EDA-ModelleEasyEDA
HXY MOSFET FDD8876-HXY
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | FDD8876-HXY |
| LCSC-Nr. | C53263131 |
| Verp. | TO-252-2L |
| Kundennummer | |
| Hauptmerkm. | 41W 30V 60A 1.5V 7mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs |
| Datenblatt | HXY MOSFET FDD8876-HXY |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 163pF | |
| Pd - Power Dissipation | 41W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.317nF | |
| Gate Charge(Qg) | 12.6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 163pF | |
| Pd - Power Dissipation | 41W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.317nF | |
| Gate Charge(Qg) | 12.6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Vorrätig: 98
98 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.9773$ 0.7819 | $ 0.78 |
| 10+ | $ 0.802$ 0.6416 | $ 6.42 |
| 30+ | $ 0.7143$ 0.5715 | $ 17.15 |
| 100+ | $ 0.6283$ 0.5027 | $ 50.27 |
| 500+ | $ 0.5763$ 0.4611 | $ 230.55 |
| 1,000+ | $ 0.5487$ 0.4390 | $ 439.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 163pF | |
| Pd - Power Dissipation | 41W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.317nF | |
| Gate Charge(Qg) | 12.6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 163pF | |
| Pd - Power Dissipation | 41W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.317nF | |
| Gate Charge(Qg) | 12.6nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NTD4979NT4G-HXY | HXY MOSFET | TO-252-2L | 99 | $0.3988 $0.4984 | ||
| NTD4810NT4G-HXY | HXY MOSFET | TO-252-2L | 99 | $0.3988 $0.4984 | ||
| IPD40N03S4L08ATMA1-HXY | HXY MOSFET | TO-252-2L | 99 | $1.1027 $1.3783 | ||
| 2SK4080-ZK-E1-AY-HXY | HXY MOSFET | TO-252-2L | 99 | $0.9468 $1.1835 | ||
| IRFR3707ZTRRPBF-HXY | HXY MOSFET | TO-252-2L | 99 | $1.4857 $1.8571 | ||
| IPD30N03S2L10ATMA1-HXY | HXY MOSFET | TO-252-2L | 99 | $1.4013 $1.7516 | ||
| NTD4808NT4G-HXY | HXY MOSFET | TO-252-2L | 98 | $0.3948 $0.4935 | ||
| NTD4810NHT4G-HXY | HXY MOSFET | TO-252-2L | 98 | $0.5481 $0.6851 | ||
| NTD4970NT4G-HXY | HXY MOSFET | TO-252-2L | 98 | $0.6131 $0.7663 | ||
| IRLR8103VTRPBF-HXY | HXY MOSFET | TO-252-2L | 98 | $0.3428 $0.4284 | ||
| IRLR7821TRLPBF-HXY | HXY MOSFET | TO-252-2L | 98 | $0.4689 $0.5861 | ||
| FDD6670S-HXY | HXY MOSFET | TO-252-2L | 97 | $1.1832 $1.4789 | ||
| NTD4959NHT4G-HXY | HXY MOSFET | TO-252-2L | 97 | $0.3542 $0.4427 | ||
| NVD4809NT4G-HXY | HXY MOSFET | TO-252-2L | 90 | $0.2323 $0.2732 | ||
| SPD30N03S2L-10-HXY | HXY MOSFET | TO-252-2L | 90 | $0.3042 $0.3578 | ||
| STD60NF3LLT4-HXY | HXY MOSFET | TO-252-2L | 90 | $0.2617 $0.3078 | ||
| AOD536 | HXY MOSFET | TO-252-2L | 85 | $0.1175 $0.1263 | ||
| IRLR8103VPBF-HXY | HXY MOSFET | TO-252-2L | 85 | $0.1180 $0.1311 | ||
| IRLR7821TRPBF-HXY | HXY MOSFET | TO-252-2L | 40 | $0.2976 $0.3501 | ||
| NTD4963NT4G-HXY | HXY MOSFET | TO-252-2L | 30 | $0.2533 $0.2814 |