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EDA-ModelleEasyEDA
ST STFU18N65M2
| Hersteller | |
| Herst.-Teilenr. | STFU18N65M2 |
| LCSC-Nr. | C495241 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | 25W 650V 12A 3V 330mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Datenblatt | ST STFU18N65M2 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 20nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 20nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protected
Anwendungen
KI-Übersetzung
- Switching applications
- LLC converters, resonant converters
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.2526 | $ 1.25 |
| 10+ | $ 1.2364 | $ 12.36 |
| 50+ | $ 1.2266 | $ 61.33 |
| 100+ | $ 1.2153 | $ 121.53 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 20nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 20nC@520V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an N-channel power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protected
Anwendungen
KI-Übersetzung
- Switching applications
- LLC converters, resonant converters
C495241 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STF18N65M2 | ST | TO-220FP | 62 | $ 1.3381 | ||
| XR70R320FT | XNRUSEMI | TO-220F | 29 | $ 0.6794 | ||
| BMF65N340E2 | Bestirpower | TO-220F | 123 | $ 0.6157 | ||
| STFH18N60M2 | ST | TO-220FP-3 | 4 | $ 0.998 | ||
| TSF70R360 | Truesemi | TO-220F | 26 | $ 0.8706 | ||
| WSR28N65F | Winsok Semicon | TO-220F | 23 | $1.2141 $1.349 | ||
| IPAN70R360P7S | Infineon | TO-220FP-3 | 2 | $ 3.1695 | ||
| WML15N70C2 | Wayon | TO-220F | 731 | $ 0.5376 | ||
| STF16N60M2 | ST | TO-220F-3 | 0 | $ 1.0284 | ||
| STF16N65M2 | ST | TO-220FP | 0 | $ 1.9204 |