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Modelli EDAEasyEDA
onsemi FGH40N60SFDTU
| Produttore | |
| Cod. Prod. | FGH40N60SFDTU |
| Cod. LCSC | C49514 |
| Imballo | TO-247 |
| Numero Cliente | |
| Attr. chiave | IGBT 600V 80A TO-247 |
| Scheda Tecnica | onsemi FGH40N60SFDTU |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247 | |
| Td(off) | 115ns | |
| Pd - Power Dissipation | 290W | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 45ns | |
| Switching Energy(Eoff) | 310uJ | |
| Turn-On Energy (Eon) | 1.13mJ | |
| Input Capacitance(Cies) | 2.11nF | |
| Output Capacitance(Coes) | 200pF | |
| Gate Charge(Qg) | 120nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247 | |
| Td(off) | 115ns | |
| Pd - Power Dissipation | 290W | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 45ns | |
| Switching Energy(Eoff) | 310uJ | |
| Turn-On Energy (Eon) | 1.13mJ | |
| Input Capacitance(Cies) | 2.11nF | |
| Output Capacitance(Coes) | 200pF | |
| Gate Charge(Qg) | 120nC |
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Descrizione
Traduzione AI
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Caratteristiche
Traduzione AI
- High Current Capability
- Low Saturation Voltage: VCE(sat)=2.3 V @ ΓIC=40 A
- High Input Impedance
- Fast Switching
- RoHS Compliant
Applicazioni
Traduzione AI
- Solar Inverter
- UPS
- Welder
- PFC
- Microwave Oven
- Telecom
- ESS
Disponibile: 874
874 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 2.6811 | $ 2.68 |
| 10+ | $ 2.2665 | $ 22.67 |
| 30+ | $ 1.8978 | $ 56.93 |
| 90+ | $ 1.6323 | $ 146.91 |
| 450+ | $ 1.5127 | $ 680.72 |
| 900+ | $ 1.4602 | $ 1314.18 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247 | |
| Td(off) | 115ns | |
| Pd - Power Dissipation | 290W | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 45ns | |
| Switching Energy(Eoff) | 310uJ | |
| Turn-On Energy (Eon) | 1.13mJ | |
| Input Capacitance(Cies) | 2.11nF | |
| Output Capacitance(Coes) | 200pF | |
| Gate Charge(Qg) | 120nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247 | |
| Td(off) | 115ns | |
| Pd - Power Dissipation | 290W | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.9V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 45ns | |
| Switching Energy(Eoff) | 310uJ | |
| Turn-On Energy (Eon) | 1.13mJ | |
| Input Capacitance(Cies) | 2.11nF | |
| Output Capacitance(Coes) | 200pF | |
| Gate Charge(Qg) | 120nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Caratteristiche
Traduzione AI
- High Current Capability
- Low Saturation Voltage: VCE(sat)=2.3 V @ ΓIC=40 A
- High Input Impedance
- Fast Switching
- RoHS Compliant
Applicazioni
Traduzione AI
- Solar Inverter
- UPS
- Welder
- PFC
- Microwave Oven
- Telecom
- ESS
C49514 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| FGH40N60UFDTU | onsemi | TO-247 | 380 | $ 3.0728 | ||
| FGH80N60FD2TU | onsemi | TO-247-3 | 7 | $ 13.2489 | ||
| FGH40N60SMD | onsemi | TO-247 | 3,806 | $ 2.6189 | ||
| BLG75T65FDL-F | BL | TO-247 | 479 | $ 1.8188 | ||
| MLG50N60FUK | Minos | TO-247 | 309 | $ 1.2239 | ||
| FGH75T65SHD-F155 | onsemi | TO-247-G03 | 33 | $ 7.0802 | ||
| IGW40N60H3FKSA1 | Infineon | TO-247-3-1 | 14 | $ 5.8038 | ||
| MSG75C65HHC0 | MASPOWER | TO-247 | 90 | $ 9.7889 | ||
| FGH40N60SMD-F085 | onsemi | TO-247-3 | 0 | $ 5.3876 | ||
| FGH75T65SQD-F155 | onsemi | TO-247-3 | 0 | $ 8.2824 |