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Modelli EDAEasyEDA
onsemi NGTB40N120L3WG
| Produttore | |
| Cod. Prod. | NGTB40N120L3WG |
| Cod. LCSC | C464072 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 454W 160A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Scheda Tecnica | onsemi NGTB40N120L3WG |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 150ns | |
| Pd - Power Dissipation | 454W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 160A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 80pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.55V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 86ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Input Capacitance(Cies) | 4.912nF | |
| Output Capacitance(Coes) | 140pF | |
| Gate Charge(Qg) | 220nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 150ns | |
| Pd - Power Dissipation | 454W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 160A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 80pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.55V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 86ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Input Capacitance(Cies) | 4.912nF | |
| Output Capacitance(Coes) | 140pF | |
| Gate Charge(Qg) | 220nC |
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Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.3711 | $ 3.37 |
| 10+ | $ 2.9078 | $ 29.08 |
| 30+ | $ 2.6322 | $ 78.97 |
| 100+ | $ 2.3536 | $ 235.36 |
| 500+ | $ 2.2243 | $ 1112.15 |
| 1,000+ | $ 2.1674 | $ 2167.40 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 150ns | |
| Pd - Power Dissipation | 454W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 160A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 80pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.55V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 86ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Input Capacitance(Cies) | 4.912nF | |
| Output Capacitance(Coes) | 140pF | |
| Gate Charge(Qg) | 220nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 150ns | |
| Pd - Power Dissipation | 454W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 160A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 80pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.55V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 86ns | |
| Switching Energy(Eoff) | 1.5mJ | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Input Capacitance(Cies) | 4.912nF | |
| Output Capacitance(Coes) | 140pF | |
| Gate Charge(Qg) | 220nC |
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C464072 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NGTB40N120FL3WG | onsemi | TO-247 | 5,566 | $ 2.8158 | ||
| FGY100T120SWD | onsemi | TO-247-3LD | 26 | $ 5.2591 | ||
| IKQ140N120CH7XKSA1 | Infineon | TO-247-3 | 26 | $ 16.0099 | ||
| FGY140T120SWD | onsemi | TO-247-3LD | 3 | $ 22.8585 | ||
| IKQ140N120CH7XKSA1-HXY | HXY MOSFET | TO-247P | 39 | $ 12.1924 | ||
| IXYX120N120C3-HXY | HXY MOSFET | TO-247P | 18 | $24.9871 $29.3965 | ||
| APT75GN120B2G | MICROCHIP | TO-247-3 | 0 | $ 43.2818 | ||
| FGY100T120RWD | onsemi | TO-247-3 | 0 | $ 16.0578 | ||
| IXYX100N120B3 | Littelfuse/IXYS | TO-247-3 | 0 | $ 33.3194 | ||
| IXYH55N120A4 | Littelfuse/IXYS | TO-247 | 0 | $ 13.2719 |