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onsemi FCP067N65S3
| Produttore | |
| Cod. Prod. | FCP067N65S3 |
| Cod. LCSC | C463233 |
| Imballo | TO-220 |
| Numero Cliente | |
| Attr. chiave | 650V 44A 4.5V 312W 67mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi FCP067N65S3 |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
Descrizione
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III MOSFET Easy Drive series helps address EMI issues, making design implementation simpler and more straightforward.
Caratteristiche
- 700 V @ TJ = 150°C
- Typical RDS(on) = 59 mΩ
- Ultra-low gate charge (typical Qg = 78 nC)
- Low effective output capacitance (typical Coss(eff.) = 715 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applicazioni
- Telecom/Server Power Supplies
- Industrial Power Supplies
- UPS/Solar
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 8.5537 | $ 8.55 |
| 10+ | $ 7.297 | $ 72.97 |
| 30+ | $ 6.5305 | $ 195.92 |
| 100+ | $ 5.8883 | $ 588.83 |
Package Standard800/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
Descrizione
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, the SUPERFET III MOSFET Easy Drive series helps address EMI issues, making design implementation simpler and more straightforward.
Caratteristiche
- 700 V @ TJ = 150°C
- Typical RDS(on) = 59 mΩ
- Ultra-low gate charge (typical Qg = 78 nC)
- Low effective output capacitance (typical Coss(eff.) = 715 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applicazioni
- Telecom/Server Power Supplies
- Industrial Power Supplies
- UPS/Solar
C463233 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NTP055N65S3H | onsemi | TO-220 | 291 | $ 2.4526 | ||
| GBS65060TOA | GOSEMICON | TO-220 | 36 | $ 3.4088 | ||
| STP65N045M9 | ST | TO-220 | 1 | $ 12.7069 | ||
| NTP082N65S3F | onsemi | TO-220 | 41 | $ 5.3763 | ||
| NTP067N65S3H | onsemi | TO-220 | 5 | $ 12.2806 | ||
| STF57N65M5 | ST | TO-220-3 | 3 | $ 15.0473 | ||
| TPP65R075DFD | WUXI UNIGROUP MICRO | TO-220 | 0 | $ 2.8138 | ||
| IPP65R050CFD7AAKSA1 | Infineon | TO-220-3 | 0 | $ 9.8578 | ||
| IPP65R045C7 | Infineon | TO-220-3 | 0 | $ 35.5468 | ||
| IPP60R060P7XKSA1 | Infineon | TO-220-3 | 0 | $ 4.5084 |