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EDA-ModelleEasyEDA
onsemi FDME1024NZT
| Hersteller | |
| Herst.-Teilenr. | FDME1024NZT |
| LCSC-Nr. | C462997 |
| Verp. | MicroFET(1.6x1.6) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH ARR 20V 3.8A MicroFET(1.6x1.6) |
| Datenblatt | onsemi FDME1024NZT |
| RoHS-Konformität | 4 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | onsemi | |
| Verp. | MicroFET(1.6x1.6) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| RDS(on) | 66mΩ@2.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.2nC | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | onsemi | |
| Verp. | MicroFET(1.6x1.6) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| RDS(on) | 66mΩ@2.5V | |
| Pd - Power Dissipation | 1.4W |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.2nC | |
| Operating Temperature | -55℃~+150℃ |
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Beschreibung
KI-Übersetzung
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Merkmale
KI-Übersetzung
- Max rDS(on)=66 mΩ at VGS=4.5 V, ID=3.4 A
- Max rDS(on)=86 mΩ at VGS=2.5 V, ID=2.9 A
- Max rDS(on)=113 mΩ at VGS=1.8 V, ID=2.5 A
- Max rDS(on)=160 mΩ at VGS=1.5 V, ID=2.1 A
- Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
- Free from halogenated compounds and antimony oxides
- HBM ESD protection level > 1600 V
- RoHS Compliant
Anwendungen
KI-Übersetzung
- Baseband Switch
- Load Switch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8841 | $ 0.88 |
| 10+ | $ 0.7182 | $ 7.18 |
| 30+ | $ 0.6352 | $ 19.06 |
| 100+ | $ 0.5522 | $ 55.22 |
| 500+ | $ 0.504 | $ 252.00 |
| 1,000+ | $ 0.4783 | $ 478.30 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | onsemi | |
| Verp. | MicroFET(1.6x1.6) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| RDS(on) | 66mΩ@2.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.2nC | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | onsemi | |
| Verp. | MicroFET(1.6x1.6) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| RDS(on) | 66mΩ@2.5V | |
| Pd - Power Dissipation | 1.4W |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | 4.2nC | |
| Operating Temperature | -55℃~+150℃ |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Merkmale
KI-Übersetzung
- Max rDS(on)=66 mΩ at VGS=4.5 V, ID=3.4 A
- Max rDS(on)=86 mΩ at VGS=2.5 V, ID=2.9 A
- Max rDS(on)=113 mΩ at VGS=1.8 V, ID=2.5 A
- Max rDS(on)=160 mΩ at VGS=1.5 V, ID=2.1 A
- Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
- Free from halogenated compounds and antimony oxides
- HBM ESD protection level > 1600 V
- RoHS Compliant
Anwendungen
KI-Übersetzung
- Baseband Switch
- Load Switch
C462997 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |