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Zdjęcia poglądowe
Modele EDAEasyEDA
DIODES DMTH3004LK3-13
| Producent | |
| Nr części prod. | DMTH3004LK3-13 |
| Nr LCSC | C397980 |
| Opak. | TO-252 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 30V 75A TO-252 |
| Karta Katalogowa | DIODES DMTH3004LK3-13 |
| Zgodność z RoHS | 5 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.37nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.37nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Type | N-Channel |
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Opis
Tłumaczenie AI
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Funkcje
Tłumaczenie AI
- Low On-Resistance
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Zastosowania
Tłumaczenie AI
- Power Management Functions
- DC-DC Converters
- Backlighting
Na stanie: 1,090
1,090 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.4085 | $ 2.04 |
| 50+ | $ 0.3314 | $ 16.57 |
| 150+ | $ 0.2983 | $ 44.75 |
| 500+ | $ 0.2571 | $ 128.55 |
| 2,500+ | $ 0.2387 | $ 596.75 |
| 5,000+ | $ 0.2277 | $ 1138.50 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.37nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.37nF | |
| Gate Charge(Qg) | 44nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Funkcje
Tłumaczenie AI
- Low On-Resistance
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Zastosowania
Tłumaczenie AI
- Power Management Functions
- DC-DC Converters
- Backlighting
C397980 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| TPSTD86N3LH5 | TECH PUBLIC | TO-252 | 2,355 | $ 0.2541 | ||
| SP3070TH | Siliup | TO-252-2L | 2,140 | $0.0472 $0.0673 | ||
| E030N3P5CL1 | Existar | TO-252 | 1,130 | $0.0981 $0.1226 | ||
| HSU90N03 | HUASHUO | TO-252 | 815 | $ 0.1629 | ||
| CMD240 | Cmos | TO-252 | 80 | $0.3778 $0.3976 | ||
| MOT100N03MD | MOT | TO-252 | 3,105 | $ 0.0957 | ||
| STD140N6F7-JSM | JSMSEMI | TO-252 | 273 | $ 0.7736 | ||
| IPD038N06N3GATMA1-JSM | JSMSEMI | TO-252-2 | 500 | $ 0.7691 | ||
| SL100N03 | Slkor | TO-252 | 2,480 | $ 0.3152 | ||
| 80N03 | GOODWORK | TO-252 | 0 | $0.0703 $0.1406 |