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EDA-ModelleEasyEDA
ST STFW3N150
| Hersteller | |
| Herst.-Teilenr. | STFW3N150 |
| LCSC-Nr. | C36207 |
| Verp. | TO-3PF |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 1.5kV 2.5A TO-3PF |
| Datenblatt | ST STFW3N150 |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-3PF | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 1.5kV | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 939pF | |
| Gate Charge(Qg) | 29.3nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-3PF | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 1.5kV | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 939pF | |
| Gate Charge(Qg) | 29.3nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Merkmale
KI-Übersetzung
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Anwendungen
KI-Übersetzung
- Switching applications
Vorrätig: 15,000
15,000 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.4577 | $ 1.46 |
| 10+ | $ 1.2847 | $ 12.85 |
| 30+ | $ 1.0529 | $ 31.59 |
| 90+ | $ 0.9321 | $ 83.89 |
| 510+ | $ 0.8815 | $ 449.57 |
| 960+ | $ 0.857 | $ 822.72 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-3PF | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 1.5kV | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 939pF | |
| Gate Charge(Qg) | 29.3nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-3PF | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 1.5kV | |
| Output Capacitance(Coss) | 102pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13.2pF | |
| RDS(on) | 9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 939pF | |
| Gate Charge(Qg) | 29.3nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Merkmale
KI-Übersetzung
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Anwendungen
KI-Übersetzung
- Switching applications
C36207 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| KNL42150A | KIA Semicon Tech | TO-3PF-3 | 30 | $ 2.216 | ||
| BL4N150-K | BL | TO-3PF | 1,155 | $ 1.3155 | ||
| MS5N170HGB2 | MASPOWER | TO-3PF | 41 | $ 3.1597 | ||
| STFW3N170 | ST | TO-3PF-3 | 10 | $ 3.2049 | ||
| STFW4N150 | ST | TO-3PF-3 | 458 | $ 2.963 | ||
| WGFW3N150 | Wild Goose | TO-3PF | 21 | $ 1.665 | ||
| OSHF3N150 | OSEN | TO-3PF | 75 | $ 1.0379 | ||
| LW03N150BU | Lewa Micro | TO-3P | 0 | $ 1.2206 | ||
| SE3N150P | SINO-IC | TO-3PF-3 | 0 | $ 1.4372 | ||
| 4N150L-T3F-T | UTC | TO-3PF | 0 | $ 2.1821 |