Infineon SPU07N60S5IN
| Hersteller | |
| Herst.-Teilenr. | SPU07N60S5IN |
| LCSC-Nr. | C3276303 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | N-channel, Current:7.3A, Voltage:600V |
| Datenblatt | Infineon SPU07N60S5IN |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 600mΩ@10V | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 7.3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 600mΩ@10V | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
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Merkmale
KI-Übersetzung
- Revolutionary new high-voltage technology
- Best-in-class RDS(ON) in TO-251 and TO-252 packages
- Ultra-low gate charge
- Periodic Avalanche rated
- Extremely high dv/dt ruggedness
- High peak current capability
- Improved transconductance
- Lead-free lead plating, RoHS compliant
- Qualified to JEDEC standards for target applications
Anwendungen
KI-Übersetzung
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, home electronics and appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical equipment not specifically intended for life support.
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7962 | $ 0.80 |
| 200+ | $ 0.3086 | $ 61.72 |
| 500+ | $ 0.2978 | $ 148.90 |
| 1,000+ | $ 0.2917 | $ 291.70 |
Standardgehäuse1/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 600mΩ@10V | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 7.3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 600mΩ@10V | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 21nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Revolutionary new high-voltage technology
- Best-in-class RDS(ON) in TO-251 and TO-252 packages
- Ultra-low gate charge
- Periodic Avalanche rated
- Extremely high dv/dt ruggedness
- High peak current capability
- Improved transconductance
- Lead-free lead plating, RoHS compliant
- Qualified to JEDEC standards for target applications
Anwendungen
KI-Übersetzung
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, home electronics and appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical equipment not specifically intended for life support.
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

