MICROCHIP JAN2N5794A
| Produttore | |
| Cod. Prod. | JAN2N5794A |
| Cod. LCSC | C3201480 |
| Imballo | TO-78-6 |
| Numero Cliente | |
| Attr. chiave | 600mW 40V 100 NPN 600mA TO-78-6 Bipolar Transistor Arrays |
| Scheda Tecnica | MICROCHIP JAN2N5794A |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Produttore | MICROCHIP | |
| Imballo | TO-78-6 | |
| Current - Collector Cutoff | 10uA | |
| Pd - Power Dissipation | 600mW | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 6V | |
| Configuration | Standalone | |
| Transition frequency(fT) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 900mV | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 600mA | |
| Operating Temperature | -65℃~+200℃ |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Produttore | MICROCHIP | |
| Imballo | TO-78-6 | |
| Current - Collector Cutoff | 10uA | |
| Pd - Power Dissipation | 600mW | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 6V |
| Tipo | Descrizione | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 900mV | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 600mA | |
| Operating Temperature | -65℃~+200℃ |
Descrizione
This specification covers the performance requirements for integrated dual transistors consisting of a pair of electrically isolated matched and unmatched NPN silicon transistors in a single package. Each device type is offered in four levels of product assurance as specified in MIL-PRF-19500. Package options include a TO-99-like through-hole mounting metal can, surface mount version U, and surface mount version UC. Unless otherwise specified, ambient temperature TA = +25°C. Maximum ratings, key electrical characteristics, electrical matching characteristics, device numbering conventions, and pin definitions are also specified.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 277.7381 | $ 277.74 |
| 200+ | $ 107.4819 | $ 21496.38 |
| 500+ | $ 103.7047 | $ 51852.35 |
| 1,000+ | $ 101.8377 | $ 101837.70 |
Package Standard1/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Produttore | MICROCHIP | |
| Imballo | TO-78-6 | |
| Current - Collector Cutoff | 10uA | |
| Pd - Power Dissipation | 600mW | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 6V | |
| Configuration | Standalone | |
| Transition frequency(fT) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 900mV | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 600mA | |
| Operating Temperature | -65℃~+200℃ |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Produttore | MICROCHIP | |
| Imballo | TO-78-6 | |
| Current - Collector Cutoff | 10uA | |
| Pd - Power Dissipation | 600mW | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 6V |
| Tipo | Descrizione | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 900mV | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 600mA | |
| Operating Temperature | -65℃~+200℃ |
Descrizione
This specification covers the performance requirements for integrated dual transistors consisting of a pair of electrically isolated matched and unmatched NPN silicon transistors in a single package. Each device type is offered in four levels of product assurance as specified in MIL-PRF-19500. Package options include a TO-99-like through-hole mounting metal can, surface mount version U, and surface mount version UC. Unless otherwise specified, ambient temperature TA = +25°C. Maximum ratings, key electrical characteristics, electrical matching characteristics, device numbering conventions, and pin definitions are also specified.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

